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Yamaguchi, Hiromu
144  results:
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1

Nondestructive Measurement Method of Leaf Area Index Using ..:

Yamaguchi, Hiromu ; Yasutake, Daisuke ; Hirota, Tomoyoshi.
HortScience.  58 (2023)  1 - p. 16-22 , 2023
Link: https://doi.org/10.21273..
 
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2

Formation mechanism of interfacial Si–oxide layers during p..:

Ono, Haruhiko ; Hosokawa, Yumiko ; Ikarashi, Taeko...
Journal of Applied Physics.  89 (2001)  2 - p. 995-1002 , 2001
Link: https://doi.org/10.1063/..
 
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3

Low Temperature Recovery of Ru/(Ba, Sr)TiO3/Ru Capacitors D..:

Iizuka, Toshihiro ; Arita, Koji ; Yamamoto, Ichiro...
Japanese Journal of Applied Physics.  39 (2000)  4S - p. 2063 , 2000
Link: https://doi.org/10.1143/..
 
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4

Low Temperature Deposition of(Ba, Sr)TiO3 Films by Electron..:

Sone, Shuji ; Yabuta, Hisato ; Kato, Yoshitake...
Japanese Journal of Applied Physics.  35 (1996)  9S - p. 5089 , 1996
Link: https://doi.org/10.1143/..
 
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5

A gbit-scale dram stacked capacitor with ECR MOCVD SrTiO3 o..:

Lesaicherre, Pierre-Yves ; Yamamichi, Shintaro ; Takemura, Koichi...
Integrated Ferroelectrics.  11 (1995)  1-4 - p. 81-100 , 1995
Link: https://doi.org/10.1080/..
 
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6

Chemical Vapor Deposition of  ( Ba , Sr ) TiO3:

Yoshida, Masaji ; Yamaguchi, Hiromu ; Sakuma, Toshiyuki...
Journal of The Electrochemical Society.  142 (1995)  1 - p. 244-248 , 1995
Link: https://doi.org/10.1149/..
 
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7

SrTiO3 thin films by mocvd for 1 gbit DRAM application:

Lesaicherre, Pierre-Yves ; Yamaguchi, Hiromu ; Miyasaka, Yoichi...
Integrated Ferroelectrics.  8 (1995)  1-2 - p. 201-225 , 1995
Link: https://doi.org/10.1080/..
 
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8

Barrier mechanism of Pt/Ta and Pt/Ti layers for SrTiO3 thin..:

Takemura, Koichi ; Sakuma, Toshlyukl ; Matsubara, Shogo...
Integrated Ferroelectrics.  4 (1994)  4 - p. 305-313 , 1994
Link: https://doi.org/10.1080/..
 
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9

Structural and Electrical Characterization of SrTiO3 Thin F..:

Yamaguchi, Hiromu ; Lesaicherre, Pierre-Yves ; Sakuma, Toshiyuki...
Japanese Journal of Applied Physics.  32 (1993)  9S - p. 4069 , 1993
Link: https://doi.org/10.1143/..
 
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10

Reactive Coevaporation Synthesis and Characterization of Sr..:

Yamaguchi, Hiromu ; Shogo Matsubara, Shogo Matsubara ; Yoichi Miyasaka, Yoichi Miyasaka
Japanese Journal of Applied Physics.  30 (1991)  9S - p. 2197 , 1991
Link: https://doi.org/10.1143/..
 
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11

Difference of reaction between AsH3 and arsenic vapor from ..:

Kobayashi, Ryuji ; Yamaguchi, Hiromu ; Jin, Yoshito.
Journal of Crystal Growth.  102 (1990)  3 - p. 471-476 , 1990
Link: https://doi.org/10.1016/..
 
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12

Barrier layers for realization of high capacitance density ..:

Sakuma, Toshiyuki ; Yamamichi, Shintaro ; Matsubara, Shogo..
Applied Physics Letters.  57 (1990)  23 - p. 2431-2433 , 1990
Link: https://doi.org/10.1063/..
 
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13

Vapor Phase Epitaxy of AlGaAs by Direct Reaction between Al..:

Yamaguchi, Hiromu ; Kobayashi, Ryuji ; Jin, Yoshito.
Japanese Journal of Applied Physics.  28 (1989)  1A - p. L4 , 1989
Link: https://doi.org/10.1143/..
 
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14

Chloride VPE of AlxGa1-xAs by the Hydrogen Reduction Method..:

Hasegawa, Fumio ; Katayama, Koji ; Kobayashi, Ryuji..
Japanese Journal of Applied Physics.  27 (1988)  2A - p. L254 , 1988
Link: https://doi.org/10.1143/..
 
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15

Vapor Phase Epitaxy of GaAs by Direct Reduction of GaCl3 wi..:

Hasegawa, Fumio ; Yamaguchi, Hiromu ; Katayama, Koji
Japanese Journal of Applied Physics.  27 (1988)  8A - p. L1546 , 1988
Link: https://doi.org/10.1143/..
 
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