Yang, Hae In
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1

Epitaxial Molybdenum Disulfide/Gallium Nitride Junctions: L..:

Yang, Hae In ; Coyle, Daniel J. ; Wurch, Michelle...
ACS Applied Materials & Interfaces.  13 (2021)  29 - p. 35105-35112 , 2021
 
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2

Capacitance-voltage measurements of monolayer MoS2 metal-ox..:

Yang, Hae In ; Choi, Woong
Microelectronic Engineering.  238 (2021)  - p. 111507 , 2021
 
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3

Electrical properties of Al2O3/WSe2 interface based on capa..:

Kang, Minji ; Yang, Hae In ; Choi, Woong
Journal of Physics D: Applied Physics.  53 (2020)  32 - p. 32LT01 , 2020
 
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4

Oxidation of WS2 and WSe2 monolayers by ultraviolet-ozone t..:

Kang, Minji ; Yang, Hae In ; Choi, Woong
Journal of Physics D: Applied Physics.  52 (2019)  50 - p. 505105 , 2019
 
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10

A Route to MoO2 film fabrication via atomic layer depositio..:

Yoon, Ara ; Yang, Hae Lin ; Lee, Sanghoon...
Ceramics International.  50 (2024)  8 - p. 13841-13848 , 2024
 
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11

Unveiling growth mechanisms of PEALD In2O3 thin films with ..:

Jeong, Gyeong Min ; Yang, Hae Lin ; Yoon, Ara...
Journal of Materials Chemistry C.  12 (2024)  28 - p. 10575-10584 , 2024
 
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13

Sequential Design of PEALD In–Ga–Zn–O Active Layer for Enha..:

Yang, Hae Lin ; Kim, Yoon-Seo ; Hwang, Taewon...
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6347-6353 , 2023
 
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