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2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) ,
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GaN on Si RF performance with different AlGaN back barrier:
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2022 International Electron Devices Meeting (IEDM) ,
2
Modeling Fatigue-Breakdown Dilemma in Ferroelectric Hf0.5 Z..:
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2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
3
Area Scalable Hafnium-Zirconium-Oxide Ferroelectric Capacit..:
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2021 IEEE International Electron Devices Meeting (IEDM) ,
4
Improving Edge Dead Domain and Endurance in Scaled HfZrOx F..:
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2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ,
5
CMOS-compatible GaN HEMT on 200mm Si-substrate for RF appli..:
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IET International Conference on Frontier Computing. Theory, Technologies and Applications ,
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