E-LIB Suche - Ergebnisse für: Yen, Cheng Tyng

1

High Density 65W AC-DC Adaptor Enabled by SiC MOSFET with U..:

Hsu, Fu Jen ; Yen, Cheng Tyng ; Hung, Hsiang Ting..
Key Engineering Materials. 948 (2023) - p. 89-93 , 2023

Link: https://doi.org/10.4028/..

2

Negative Bias Temperature Instability on Subthreshold Swing..:

Yen, Cheng Tyng ; Hung, Hsiang Ting ; Hung, Chien Chung...
Materials Science Forum. 897 (2017) - p. 533-536 , 2017

Link: https://doi.org/10.4028/..

3

Negative Bias Temperature Instability of SiC MOSFET:

Yen, Cheng Tyng ; Hung, Hsiang Ting ; Hung, Chien Chung...
Materials Science Forum. 858 (2016) - p. 595-598 , 2016

Link: https://doi.org/10.4028/..

4

Effect of Fixed Oxide Charges and Donor-Like Interface Trap..:

Yen, Cheng Tyng ; Hung, Hsiang Ting ; Hung, Chien Chung...
Materials Science Forum. 821-823 (2015) - p. 729-732 , 2015

Link: https://doi.org/10.4028/..

5

Comparative Study of 4H-SiC DMOSFETs with N2O Thermal Oxide..:

Yen, Cheng Tyng ; Hung, Chien Chung ; Mikhaylov, Aleksey...
Materials Science Forum. 778-780 (2014) - p. 989-992 , 2014

Link: https://doi.org/10.4028/..

6

SiC Epi-Channel Lateral MOSFETs:

Yen, Cheng Tyng ; Bakowski, Mietek ; Hung, Chien Chung...
Materials Science Forum. 778-780 (2014) - p. 927-930 , 2014

Link: https://doi.org/10.4028/..

7

Simulation and Optimization of 4H-SiC DMOSFET Power Transis..:

Hung, Chien Chung ; Chen, Young Shying ; Yen, Cheng Tyng...
Materials Science Forum. 740-742 (2013) - p. 711-714 , 2013

Link: https://doi.org/10.4028/..

8

Performance Comparison of GaN Power Transistors and Investi..:

Lee, Chwan Ying ; Chen, Yung Hsiang ; Lee, Lurng Shehng...
Materials Science Forum. 717-720 (2012) - p. 1303-1306 , 2012

Link: https://doi.org/10.4028/..

9

Refining Accuracy: A Quasi-Floating Channel SPICE Model for..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Hsu, Fu-Jen ; Chang, Ting-Fu ; Hung, Hsiang-Ting.. - p. 72-75 , 2024

Link: https://doi.org/10.1109/..

10

An Ultralow Forward Voltage SiC Trenched Junction-Pinched B..:

, In: 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia),

Hsu, Fu-Jen ; Yen, Cheng-Tyng ; Hung, Hsiang-Ting... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

11

Impact of Layout Arrangement on Surge Current and Avalanche..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Hsu, Fu-Jen ; Hung, Hsiang-Ting ; Yen, Cheng-Tyng - p. 314-317 , 2023

Link: https://doi.org/10.1109/..

12

A Highly Integrated Sensorless Field Oriented Control BLDC ..:

, In: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),

Hsu, Fu-Jen ; Yen, Cheng-Tyng ; Hung, Hsiang-Ting... - p. 176-179 , 2022

Link: https://doi.org/10.1109/..

13

Short-Circuit Ruggedness Analysis of SiC JMOS and DMOS:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Hsu, Fu-Jen ; Yen, Cheng-Tyng ; Hung, Chien-Chung... - p. 255-258 , 2019

Link: https://doi.org/10.1109/..

14

SiC MOSFET with Integrated Zener Diode as an Asymmetric Bid..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Yen, Cheng-Tyng ; Hsu, Fu-Jen ; Chu, Kuo-Ting... - p. 135-138 , 2019

Link: https://doi.org/10.1109/..

15

Influence of displacement damage induced by neutron irradia..:

Chao, Der-Sheng ; Shih, Hua-Yu ; Jiang, Jheng-Yi...
Japanese Journal of Applied Physics. 58 (2019) SB - p. SBBD08 , 2019

Link: https://doi.org/10.7567/..