Yen, Cheng-Tyng
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1

Refining Accuracy: A Quasi-Floating Channel SPICE Model for..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Hsu, Fu-Jen ; Chang, Ting-Fu ; Hung, Hsiang-Ting.. - p. 72-75 , 2024
 
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2

An Ultralow Forward Voltage SiC Trenched Junction-Pinched B..:

, In: 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia),
 
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3

Impact of Layout Arrangement on Surge Current and Avalanche..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
 
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4

A Highly Integrated Sensorless Field Oriented Control BLDC ..:

, In: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Hsu, Fu-Jen ; Yen, Cheng-Tyng ; Hung, Hsiang-Ting... - p. 176-179 , 2022
 
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5

SiC MOSFET with Integrated Zener Diode as an Asymmetric Bid..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Yen, Cheng-Tyng ; Hsu, Fu-Jen ; Chu, Kuo-Ting... - p. 135-138 , 2019
 
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6

Short-Circuit Ruggedness Analysis of SiC JMOS and DMOS:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Hsu, Fu-Jen ; Yen, Cheng-Tyng ; Hung, Chien-Chung... - p. 255-258 , 2019
 
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7

Influence of displacement damage induced by neutron irradia..:

Chao, Der-Sheng ; Shih, Hua-Yu ; Jiang, Jheng-Yi...
Japanese Journal of Applied Physics.  58 (2019)  SB - p. SBBD08 , 2019
 
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9

A comprehensive study on the oxidation of 4H-SiC in diluted..:

Tseng, Yuan-Hung ; Wu, Tsung-Han ; Tsui, Bing-Yue...
Japanese Journal of Applied Physics.  56 (2017)  4S - p. 04CR02 , 2017
 
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11

Characteristics improvement of 4H-SiC using termination wit..:

, In: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD),
 
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