E-LIB Suche - Ergebnisse für: You, Shuzhen

1

p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Proc..:

Han, Zhanfei ; Li, Xiangdong ; Ji, Jian...
IEEE Electron Device Letters. 45 (2024) 7 - p. 1257-1260 , 2024

Link: https://doi.org/10.1109/..

2

Improving the Manufacturability of Low-Temperature GaN Ohmi..:

Liu, Tong ; Li, Xiangdong ; Han, Zhanfei...
IEEE Journal of the Electron Devices Society. 12 (2024) - p. 170-175 , 2024

Link: https://doi.org/10.1109/..

3

TCAD Simulation of the Effect of Buffer Layer Parameters on..:

Zhang, Ga ; Zhao, Shenglei ; Wang, Zhizhe...
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4119-4124 , 2024

Link: https://doi.org/10.1109/..

4

High-Performance GaN HEMTs on Single Crystalline AlN Templa..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Wang, Junbo ; Li, Xiangdong ; Chen, Long... - p. 522-525 , 2024

Link: https://doi.org/10.1109/..

5

Characteristics prediction and optimization of InP HBT usin..:

Jie, Xiao ; Wang, Jie ; Ouyang, Xinjian...
Journal of Computational Electronics. 23 (2024) 2 - p. 305-313 , 2024

Link: https://doi.org/10.1007/..

6

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviol..:

Han, Zhanfei ; Li, Xiangdong ; Wang, Hongyue...
Micromachines. 15 (2024) 1 - p. 156 , 2024

Link: https://doi.org/10.3390/..

7

1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1..:

Li, Xiangdong ; Wang, Junbo ; Zhang, Jincheng...
IEEE Electron Device Letters. 45 (2024) 1 - p. 84-87 , 2024

Link: https://doi.org/10.1109/..

8

Comparative Investigation on the Repetitive Short-Circuit C..:

Li, Xiangdong ; Wang, Meng ; Wang, Hongyue...
IEEE Transactions on Electron Devices. 71 (2024) 4 - p. 2550-2556 , 2024

Link: https://doi.org/10.1109/..

9

Report of GaN HEMTs on 8-in Sapphire:

Wang, Junbo ; Li, Xiangdong ; Chen, Long...
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4429-4432 , 2024

Link: https://doi.org/10.1109/..

10

Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manuf..:

Li, Xiangdong ; Zhang, Jie ; Ji, Jian...
IEEE Transactions on Electron Devices. 71 (2024) 6 - p. 3989-3993 , 2024

Link: https://doi.org/10.1109/..

11

Revealing the Mechanism of the Bias Temperature Instability..:

Li, Xiangdong ; Wang, Meng ; Zhang, Jincheng...
Micromachines. 14 (2023) 5 - p. 1042 , 2023

Link: https://doi.org/10.3390/..

12

Investigating the Failure Mechanism of p-GaN Gate HEMTs und..:

Han, Zhanfei ; Li, Xiangdong ; Wang, Hongyue...
Micromachines. 14 (2023) 5 - p. 940 , 2023

Link: https://doi.org/10.3390/..

13

Transparent ITO gate p-GaN/AlGaN/GaN UV photodetector with ..:

, In: 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia),

Han, Zhanfei ; Li, Xiangdong ; Wang, Hongyue... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

14

Biogeochemistry of sedimentary phosphorus species in the wo..:

You, Shuzhen ; Loh, Pei Sun ; Chen, Chen-Tung Arthur...
Chemistry and Ecology. 38 (2022) 8 - p. 773-787 , 2022

Link: https://doi.org/10.1080/..

15

Geochemical Behavior of Sedimentary Phosphorus Species in N..:

You, Shuzhen ; Loh, Peisun ; Li, Zilong...
Forests. 13 (2022) 4 - p. 610 , 2022

Link: https://doi.org/10.3390/..