E-LIB Suche - Ergebnisse für: Yu, Shui-Qing

1

Auger-limited minority carrier lifetime in GeSn/SiGeSn quan..:

Grant, Perry C. ; Webster, Preston T. ; Carrasco, Rigo A....
Applied Physics Letters. 124 (2024) 11 - p. , 2024

Link: https://doi.org/10.1063/..

2

Group IV topological quantum alloy and the role of short-ra..:

Liang, Yunfan ; Chen, Shunda ; Jin, Xiaochen...
npj Computational Materials. 10 (2024) 1 - p. , 2024

Link: https://doi.org/10.1038/..

3

The growth of Ge and direct bandgap Ge1−xSnx on GaAs (001) ..:

Gunder, Calbi ; Maia de Oliveira, Fernando ; Wangila, Emmanuel...
RSC Advances. 14 (2024) 2 - p. 1250-1257 , 2024

Link: https://doi.org/10.1039/..

4

The Epitaxial Growth of Ge and GeSn Semiconductor Thin Film..:

Wangila, Emmanuel ; Gunder, Calbi ; Lytvyn, Petro M....
Crystals. 14 (2024) 5 - p. 414 , 2024

Link: https://doi.org/10.3390/..

5

Comprehensive material study of Ge grown by aspect ratio tr..:

Stanchu, Hryhorii ; Kryvyi, Serhii ; Margiotta, Stephen...
Journal of Physics D: Applied Physics. 57 (2024) 25 - p. 255107 , 2024

Link: https://doi.org/10.1088/..

6

Impact of carrier momentum (k)-space separation on GeSn inf..:

Ghosh, Soumava ; Sun, Greg ; Yu, Shui-Qing.
IEEE Journal of Selected Topics in Quantum Electronics. , 2024

Link: https://doi.org/10.1109/..

7

Algorithm-Based Linearly Graded Compositions of GeSn on GaA..:

Gunder, Calbi ; Zamani-Alavijeh, Mohammad ; Wangila, Emmanuel...
Nanomaterials. 14 (2024) 11 - p. 909 , 2024

Link: https://doi.org/10.3390/..

8

Epitaxial growth of Ge1-xSnx on c – Plane sapphire substrat..:

Gayakwad, Dhammapriy ; Singh, Dushyant ; Kumar, Rahul...
Journal of Crystal Growth. 618 (2023) - p. 127306 , 2023

Link: https://doi.org/10.1016/..

9

Improving the Material Quality of GaAs Grown on the c-Plane..:

Kumar, Rahul ; Saha, Samir K. ; Kuchuk, Andrian...
Crystal Growth & Design. 23 (2023) 10 - p. 7385-7393 , 2023

Link: https://doi.org/10.1021/..

10

Study of all-group-IV SiGeSn mid-IR lasers with dual wavele..:

Abernathy, Grey ; Ojo, Solomon ; Said, Abdulla...
Scientific Reports. 13 (2023) 1 - p. , 2023

Link: https://doi.org/10.1038/..

11

"GeSn Rule-23"—The Performance Limit of GeSn Infrared Photo..:

Chang, Guo-En ; Yu, Shui-Qing ; Sun, Greg
Sensors. 23 (2023) 17 - p. 7386 , 2023

Link: https://doi.org/10.3390/..

12

Strain-Mediated Sn Incorporation and Segregation in Composi..:

M. Eldose, Nirosh ; Stanchu, Hryhorii ; Das, Subhashis...
Crystal Growth & Design. 23 (2023) 11 - p. 7737-7743 , 2023

Link: https://doi.org/10.1021/..

13

Depth-dependent photoluminescence characteristic of GeSn/Si..:

Ojo, Solomon ; Stanchu, Hryhorii ; Acharya, Sudip...
Journal of Crystal Growth. 605 (2023) - p. 127062 , 2023

Link: https://doi.org/10.1016/..

14

Growth of Germanium Thin Films on Sapphire Using Molecular ..:

Wangila, Emmanuel ; Lytvyn, Peter ; Stanchu, Hryhorii...
Crystals. 13 (2023) 11 - p. 1557 , 2023

Link: https://doi.org/10.3390/..

15

Photoconductivity of GeSn thin films with up to 15% Sn cont..:

Kondratenko, Serhiy ; Datsenko, Oleksandr ; Kuchuk, Andrian V....
Physical Review Materials. 7 (2023) 7 - p. , 2023

Link: https://doi.org/10.1103/..