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Zíková, M.
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1

Influence of Si doping of GaN layers surrounding InGaN quan..:

Zíková, M. ; Hospodková, A. ; Pangrác, J....
Journal of Crystal Growth.  506 (2019)  - p. 8-13 , 2019
Link: https://doi.org/10.1016/..
 
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2

Strong suppression of In desorption from InGaN QW by improv..:

Hubáček, T. ; Hospodková, A. ; Oswald, J....
Journal of Crystal Growth.  507 (2019)  - p. 310-315 , 2019
Link: https://doi.org/10.1016/..
 
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3

On the correlations between the excitonic luminescence effi..:

Hospodková, A. ; Oswald, J. ; Zíková, M....
Journal of Applied Physics.  121 (2017)  21 - p. , 2017
Link: https://doi.org/10.1063/..
 
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4

Growth and properties of the MOVPE GaAs/InAs/GaAsSb quantum..:

Hospodková, A. ; Oswald, J. ; Pangrác, J....
Physica B: Condensed Matter.  480 (2016)  - p. 14-22 , 2016
Link: https://doi.org/10.1016/..
 
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5

Polarization anisotropy of the emission from type-II quantu..:

Klenovský, P. ; Hemzal, D. ; Steindl, P....
Physical Review B.  92 (2015)  24 - p. , 2015
Link: https://doi.org/10.1103/..
 
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6

Two-band superlinear electroluminescence in GaSb based nano..:

Mikhailova, M. P. ; Ivanov, E. V. ; Danilov, L. V....
Journal of Applied Physics.  115 (2014)  22 - p. , 2014
Link: https://doi.org/10.1063/..
 
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7

Graded GaAsSb strain reducing layers covering InAs/GaAs qua..:

Hospodková, A. ; Zíková, M. ; Pangrác, J....
Journal of Crystal Growth.  370 (2013)  - p. 303-306 , 2013
Link: https://doi.org/10.1016/..
 
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8

Type I–type II band alignment of a GaAsSb/InAs/GaAs quantum..:

Hospodková, A ; Zíková, M ; Pangrác, J...
Journal of Physics D: Applied Physics.  46 (2013)  9 - p. 095103 , 2013
Link: https://doi.org/10.1088/..
 
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9

Combined vertically correlated InAs and GaAsSb quantum dots..:

Hospodková, A. ; Oswald, J. ; Pangrác, J....
Journal of Applied Physics.  114 (2013)  17 - p. , 2013
Link: https://doi.org/10.1063/..
 
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10

Superlinear electroluminescence due to impact ionization in..:

Mikhailova, M. P. ; Ivanov, E. V. ; Danilov, L. V....
Journal of Applied Physics.  112 (2012)  2 - p. , 2012
Link: https://doi.org/10.1063/..
 
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11

Improvement of luminescence properties of n-GaN using TEGa ..:

Hubáček, T. ; Hospodková, A. ; Kuldová, K....
Journal of Crystal Growth.  531 (2020)  - p. 125383 , 2020
Link: https://doi.org/10.1016/..
 
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12

A secret luminescence killer in deepest QWs of InGaN/GaN mu..:

Hospodková, A. ; Hájek, F. ; Pangrác, J....
Journal of Crystal Growth.  536 (2020)  - p. 125579 , 2020
Link: https://doi.org/10.1016/..
 
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13

Polarization anisotropy of the emission from type-II quantu..:

Klenovsky, P ; Hemzal, D ; Steindl, P...
http://arxiv.org/abs/1612.03585.  , 2016
Link: http://arxiv.org/abs/161..
 
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14

On the correlations between the excitonic luminescence effi..:

Hospodková, A. (Alice) ; Oswald, J. (Jiří) ; Zíková, M. (Markéta)...
info:eu-repo/grantAgreement/EC//CZ.2.16/3.1.00/24510/EU//.  , 2017
Link: https://doi.org/10.1063/..
 
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15

Procyclic trypanosomes recycle glucose catabolites and TCA ..:

Villafraz, Oriana ; Biran, Marc ; Pineda, Erika...
PLOS Pathogens.  17 (2021)  3 - p. e1009204 , 2021
Link: https://doi.org/10.1371/..
 
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