E-LIB Suche - Ergebnisse für: Zetterling, Carl-Mikael

1

In Situ Gamma Irradiation Effects on 4H-SiC Bipolar Junctio..:

Metreveli, Alex ; Hallén, Anders ; Sarcina, Ilaria Di...
IEEE Transactions on Nuclear Science. 70 (2023) 12 - p. 2597-2604 , 2023

Link: https://doi.org/10.1109/..

2

Self-aligned contacts to ion implanted S/D regions in 4H-Si:

Ekström, Mattias ; Zetterling, Carl-Mikael
Materials Science in Semiconductor Processing. 168 (2023) - p. 107849 , 2023

Link: https://doi.org/10.1016/..

3

Venus Calling Silicon Carbide Radio Circuits Can Take The H..:

Mantooth, Alan ; Zetterling, Carl-Mikael ; Rusu, Ana
IEEE Spectrum. 58 (2021) 5 - p. 24-30 , 2021

Link: https://doi.org/10.1109/..

4

Deposition of diamond films on single crystalline silicon c..:

Mukherjee, Debarati ; Oliveira, Filipe ; Trippe, Simone Camargo...
Diamond and Related Materials. 101 (2020) - p. 107625 , 2020

Link: https://doi.org/10.1016/..

5

A Silicon Carbide 256 Pixel UV Image Sensor Array Operating..:

Hou, Shuoben ; Shakir, Muhammad ; Hellstrom, Per-Erik...
IEEE Journal of the Electron Devices Society. 8 (2020) - p. 116-121 , 2020

Link: https://doi.org/10.1109/..

6

Ultrafast Pulsed I-V and Charge Pumping Interface Character..:

Ekström, Mattias ; Malm, B. Gunnar ; Zetterling, Carl-Mikael
Materials Science Forum. 1004 (2020) - p. 642-651 , 2020

Link: https://doi.org/10.4028/..

7

Towards Silicon Carbide VLSI Circuits for Extreme Environme..:

Shakir, Muhammad ; Hou, Shuoben ; Hedayati, Raheleh...
Electronics. 8 (2019) 5 - p. 496 , 2019

Link: https://doi.org/10.3390/..

8

High Temperature High Current Gain IC Compatible 4H-SiC Pho..:

Hou, Shuo Ben ; Hellström, Per Erik ; Zetterling, Carl-Mikael.
Materials Science Forum. 963 (2019) - p. 832-836 , 2019

Link: https://doi.org/10.4028/..

9

Investigation of a Self-Aligned Cobalt Silicide Process for..:

Ekström, Mattias ; Ferrario, Andrea ; Zetterling, Carl-Mikael
Journal of Electronic Materials. 48 (2019) 4 - p. 2509-2516 , 2019

Link: https://doi.org/10.1007/..

10

High-Temperature Recessed Channel SiC CMOS Inverters and Ri..:

Ekstrom, Mattias ; Malm, Bengt Gunnar ; Zetterling, Carl-Mikael
IEEE Electron Device Letters. 40 (2019) 5 - p. 670-673 , 2019

Link: https://doi.org/10.1109/..

11

4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters:

Inoue, Jun ; Kuroki, Shin-Ichiro ; Ishikawa, Seiji...
Materials Science Forum. 963 (2019) - p. 837-840 , 2019

Link: https://doi.org/10.4028/..

12

500°C SiC-based driver IC for SiC power MOSFETs:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Kargarrazi, Saleh ; Elahipanah, Hossein ; Tong, Zikang.. - p. 115-118 , 2019

Link: https://doi.org/10.1109/..

13

Wide Bandgap Integrated Circuits for High Power Management ..:

, In: Next-Generation ADCs, High-Performance Power Management, and Technology Considerations for Advanced Integrated Circuits,

Zetterling, Carl-Mikael ; Kargarrazi, Saleh ; Shakir, Muhammad - p. 167-178 , 2019

Link: https://doi.org/10.1007/..

14

A Monolithic 500°C D-Flip Flop Realized in Bipolar 4H-SiC T..:

Shakir, Muhammad ; Hou, Shuo Ben ; Zetterling, Carl-Mikael
Materials Science Forum. 963 (2019) - p. 818-822 , 2019

Link: https://doi.org/10.4028/..

15

Suppression of Short-Channel Effects in 4H-SiC Trench MOSFE..:

Ishii, Tomoyasu ; Kuroki, Shin-Ichiro ; Sezaki, Hiroshi...
Materials Science Forum. 963 (2019) - p. 613-616 , 2019

Link: https://doi.org/10.4028/..