E-LIB Suche - Ergebnisse für: Zhan, Xuepeng

1

Polarization switching pathways of ferroelectric Zr-doped H..:

Dou, Xiaoyu ; Wei, Wei ; Sang, Pengpeng...
Applied Physics Letters. 124 (2024) 9 - p. , 2024

Link: https://doi.org/10.1063/..

2

Van der Waals polarity-engineered 3D integration of 2D comp..:

Guo, Yimeng ; Li, Jiangxu ; Zhan, Xuepeng...
Nature. 630 (2024) 8016 - p. 346-352 , 2024

Link: https://doi.org/10.1038/..

3

Optimized operation scheme of flash-memory-based neural net..:

Feng, Yang ; Sun, Zhaohui ; Qi, Yueran...
Journal of Semiconductors. 45 (2024) 1 - p. 012301 , 2024

Link: https://doi.org/10.1088/..

4

Silicon Atomic-Layer Doped Hf₀.₇Zr₀.₃O₂ Films: Toward Low C..:

Tai, Lu ; Wei, Wei ; Sang, Pengpeng...
IEEE Transactions on Electron Devices. 71 (2024) 7 - p. 4403-4406 , 2024

Link: https://doi.org/10.1109/..

5

Erratum: "Polarization switching pathways of ferroelectric ..:

Dou, Xiaoyu ; Wei, Wei ; Sang, Pengpeng...
Applied Physics Letters. 125 (2024) 2 - p. , 2024

Link: https://doi.org/10.1063/..

6

In-Depth Investigation of Seed Layer Engineering in Ferroel..:

Li, Xiaopeng ; Wu, Jixuan ; Tai, Lu...
IEEE Transactions on Electron Devices. 71 (2024) 2 - p. 1048-1053 , 2024

Link: https://doi.org/10.1109/..

7

Flash-based Computing-in-memory Architectures with High-acc..:

, In: 2023 IEEE 15th International Conference on ASIC (ASICON),

Feng, Yang ; Qi, Yueran ; Zhan, Xuepeng.. - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

8

Simulation for the Feasibility of IGZO Channel in 3D Vertic..:

, In: 2023 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA),

Du, Zhichao ; Sun, Chuanxue ; Dou, Xiaoyu... - p. 51-52 , 2023

Link: https://doi.org/10.1109/..

9

Dual-pulse disturb-free programming scheme for FeFET based ..:

Wu, Shuhao ; Chen, Bo ; Wang, Chengcheng...
Microelectronics Journal. 137 (2023) - p. 105818 , 2023

Link: https://doi.org/10.1016/..

10

P-type Cold-source Field-effect Transistors with TcX2 and R..:

Wang, Qianwen ; Wu, Jixuan ; Zhan, Xuepeng..
Chinese Physics B. , 2023

Link: https://doi.org/10.1088/..

11

Cross-Temperature Reliabilities in TLC 3D NAND Flash Memory..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Guo, Yifan ; Xie, Kenie ; Fang, Xiaotong... - p. 1-3 , 2023

Link: https://doi.org/10.1109/..

12

Fully Flash-Based Reservoir Computing Network With Low Powe..:

Feng, Yang ; Tang, Mingfeng ; Sun, Zhaohui...
IEEE Transactions on Electron Devices. 70 (2023) 9 - p. 4972-4975 , 2023

Link: https://doi.org/10.1109/..

13

Significant Reliability Improvement by Inducing Dual Atomic..:

Tai, Lu ; Wei, Wei ; Sang, Pengpeng...
IEEE Electron Device Letters. 44 (2023) 5 - p. 753-756 , 2023

Link: https://doi.org/10.1109/..

14

Flash-Based Computing-in-Memory Architecture to Implement H..:

Qi, Yueran ; Feng, Yang ; Wang, Hai...
Micromachines. 14 (2023) 12 - p. 2190 , 2023

Link: https://doi.org/10.3390/..

15

Toward Low-Thermal-Budget Processing in Ferroelectric Hf0.5..:

Tai, Lu ; Wei, Wei ; Jiang, Pengfei...
IEEE Electron Device Letters. 44 (2023) 12 - p. 1959-1962 , 2023

Link: https://doi.org/10.1109/..