E-LIB Suche - Ergebnisse für: Zhang, Hengshuang

1

High Linear and Temperature Insensitive GaAs Power Amplifie..:

Liu, Wen-Liang ; Yi, Chu-Peng ; Zhang, Heng-Shuang...
IEEE Microwave and Wireless Technology Letters. 33 (2023) 3 - p. 331-334 , 2023

Link: https://doi.org/10.1109/..

2

Q-band Medium Power Amplifier with 2nd Harmonic Manipulatio..:

, In: 2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT),

Li, Xiaoxiao ; Zhang, Hengshuang ; Fu, Wenli... - p. 1-3 , 2023

Link: https://doi.org/10.1109/..

3

Design of a 17–24-GHz High-Efficiency Power Amplifier for S..:

Yi, Chupeng ; Lu, Yang ; Zhao, Ziyue...
IEEE Microwave and Wireless Technology Letters. 33 (2023) 2 - p. 188-191 , 2023

Link: https://doi.org/10.1109/..

4

A L-Band High Gain Amplifier Module Using 3D SiP Technology:

, In: 2023 6th International Conference on Electronics Technology (ICET),

Su, Jiaqi ; Li, Bin ; Yao, Xin... - p. 324-328 , 2023

Link: https://doi.org/10.1109/..

5

Design of a 17-21 GHz Power Amplifier Based on an Extended ..:

, In: 2022 IEEE MTT-S International Wireless Symposium (IWS),

Yi, Chupeng ; Lu, Yang ; Zhao, Ziyue... - p. 1-3 , 2022

Link: https://doi.org/10.1109/..

6

A UHF-band 100 W broadband hybrid GaN power amplifier based..:

Lu, Yang ; Xu, Xin ; Han, Hongbo...
AEU - International Journal of Electronics and Communications. 141 (2021) - p. 153959 , 2021

Link: https://doi.org/10.1016/..

7

A 18‐23 GHz power amplifier design using approximate optima..:

Yi, Chupeng ; Lu, Yang ; Zhao, Ziyue...
International Journal of RF and Microwave Computer-Aided Engineering. 31 (2021) 7 - p. , 2021

Link: https://doi.org/10.1002/..

8

Highly accurateGaN HEMTmodel based on theAngelovmodel with ..:

Zhao, Ziyue ; Lu, Yang ; Zhang, Hengshuang...
Microwave and Optical Technology Letters. 62 (2020) 11 - p. 3505-3513 , 2020

Link: https://doi.org/10.1002/..

9

Influence of fin width and gate structure on the performanc..:

Zhang, Meng ; Ma, Xiaohua ; Mi, Minhan...
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 33 (2019) 3 - p. , 2019

Link: https://doi.org/10.1002/..

10

A Novel Scalable Series MIM Capacitor Model for MMIC Applic..:

, In: 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS),

Yi, Chupeng ; Lu, Yang ; Zhang, Hengshuang... - p. 67-70 , 2019

Link: https://doi.org/10.1109/..

11

High Precision Model by Error Compensation Method based on ..:

, In: 2019 16th China International Forum on Solid State Lighting & 2019 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS),

Zhao, Ziyue ; Lu, Yang ; Zhang, Hengshuang... - p. 63-66 , 2019

Link: https://doi.org/10.1109/..

12

Extraction method for parasitic capacitances and inductance..:

Zhang, HengShuang ; Ma, PeiJun ; Lu, Yang...
Solid-State Electronics. 129 (2017) - p. 108-113 , 2017

Link: https://doi.org/10.1016/..

13

Investigation of enhancement-mode AlGaN/GaN nanowire channe..:

He, Yunlong ; Wang, Chong ; Mi, Minhan...
Applied Physics Express. 10 (2017) 5 - p. 056502 , 2017

Link: https://doi.org/10.7567/..

14

The coupling effect of air-bridges on broadband spiral indu..:

Zheng, Jia-Xin ; Ma, Xiao-Hua ; Lu, Yang...
Chinese Physics B. 26 (2017) 8 - p. 088401 , 2017

Link: https://doi.org/10.1088/..

15

1.5-V-threshold-voltage Schottky barrier normally-off AlGaN..:

Hou, Bin ; Ma, Xiaohua ; Yang, Ling...
Applied Physics Express. 10 (2017) 7 - p. 076501 , 2017

Link: https://doi.org/10.7567/..