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Zhang, Qing Chun
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1

650 V, 7 mΩ 4H-SiC DMOSFETs for Dual-Side Sintered Power Mo..:

Zhang, Qing Chun ; McCain, Matthew ; Hull, Brett...
Materials Science Forum.  924 (2018)  - p. 822-826 , 2018
Link: https://doi.org/10.4028/..
 
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2

Blocking Performance Improvements for 4H-SiC P-GTO Thyristo..:

Ryu, Sei Hyung ; Lichtenwalner, Daniel J. ; O'Loughlin, Michael...
Materials Science Forum.  924 (2018)  - p. 633-636 , 2018
Link: https://doi.org/10.4028/..
 
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3

Next Generation Planar 1700 V, 20 mΩ 4H-SiC DMOSFETs with L..:

Zhang, Q.J. ; Wang, G. ; Jonas, Charlotte...
Materials Science Forum.  897 (2017)  - p. 521-524 , 2017
Link: https://doi.org/10.4028/..
 
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4

Collector Conductivity Modulation in 1200-V 4H-SiC BJTs (Mo..:

Ivanov, Pavel A. ; Yuferev, Valentin S. ; Levinshtein, Mikhail E...
Materials Science Forum.  897 (2017)  - p. 563-566 , 2017
Link: https://doi.org/10.4028/..
 
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5

Oligomeric Aβ-Induced Microglial Activation is Possibly Med..:

Li, Juan ; Yang, Jing Yu ; Yao, Xue Chun...
Neurochemical Research.  38 (2012)  2 - p. 443-452 , 2012
Link: https://doi.org/10.1007/..
 
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6

Self-Helpingly Exchanging and Charging Batteries for EN-V:

Chen, Shu Ping ; Zhang, Qing Chun ; Meng, Xiang Fei...
Advanced Engineering Forum.  2-3 (2011)  - p. 1093-1098 , 2011
Link: https://doi.org/10.4028/..
 
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7

A Tetra-State Hopping Robot Driven by Shape Memory Alloy Sp..:

Liu, Tian Qi ; Chen, Shu Ping ; Guo, Jiang Long...
Advanced Engineering Forum.  2-3 (2011)  - p. 402-407 , 2011
Link: https://doi.org/10.4028/..
 
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8

A New Dynamic Version Control Method Oriented the Complex P..:

Ma, Ming Xu ; Mao, Xin ; Zhang, Qing Chun
Advanced Engineering Forum.  2-3 (2011)  - p. 629-634 , 2011
Link: https://doi.org/10.4028/..
 
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9

CIMOSFET: A New MOSFET on SiC with a Superior Ron·Qgd Figur..:

Zhang, Qing Chun Jon ; Duc, Jennifer ; Hull, Brett...
Materials Science Forum.  821-823 (2015)  - p. 765-768 , 2015
Link: https://doi.org/10.4028/..
 
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10

4H-SiC Trench Schottky Diodes for Next Generation Products:

Zhang, Qing Chun Jon ; Duc, Jennifer ; Mieczkowski, Van...
Materials Science Forum.  740-742 (2013)  - p. 781-784 , 2013
Link: https://doi.org/10.4028/..
 
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11

10 kV, 10 A Bipolar Junction Transistors and Darlington Tra..:

Zhang, Qing Chun Jon ; Callanan, Robert ; Agarwal, Anant K....
Materials Science Forum.  645-648 (2010)  - p. 1025-1028 , 2010
Link: https://doi.org/10.4028/..
 
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12

A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positi..:

Zhang, Qing Chun Jon ; Richmond, Jim ; Capell, Craig...
Materials Science Forum.  645-648 (2010)  - p. 1045-1048 , 2010
Link: https://doi.org/10.4028/..
 
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13

Performance, Reliability, and Robustness of 4H-SiC Power DM..:

Ryu, Sei Hyung ; Hull, Brett A. ; Dhar, Sarit...
Materials Science Forum.  645-648 (2010)  - p. 969-974 , 2010
Link: https://doi.org/10.4028/..
 
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14

Optimizing the Thermally Oxidized 4H-SiC MOS Interface for ..:

Das, Mrinal K. ; Haney, Sarah K. ; Jonas, Charlotte..
Materials Science Forum.  556-557 (2007)  - p. 667-670 , 2007
Link: https://doi.org/10.4028/..
 
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15

Simulations of 10 kV Trench Gate IGBTs on 4H-SiC:

Zhang, Qing Chun Jon ; Ryu, Sei Hyung ; Jonas, Charlotte..
Materials Science Forum.  527-529 (2006)  - p. 1405-1408 , 2006
Link: https://doi.org/10.4028/..
 
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