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Zhao, DG (Zhao, De-Gang)
19
results:
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english (14)
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?
1
Influence of structure parameters on the performance of p-i..:
Zhou M (Zhou Mei)
;
Zhao DG (Zhao De-Gang)
ACTA PHYSICA SINICA. , 2012
Link:
http://ir.semi.ac.cn/han..
?
2
Dislocation Behavior in AlGaN/GaN Multiple Quantum-Well Fil..:
Sun HH (Sun He-Hui)
;
Guo FY (Guo Feng-Yun)
;
Li DY (Li Deng-Yue)
...
CHINESE PHYSICS LETTERS. , 2012
Link:
http://ir.semi.ac.cn/han..
?
3
The effects of sapphire nitridation on GaN growth by metalo..:
Le LC (Le Ling-Cong)
;
Zhao DG (Zhao De-Gang)
;
Wu LL (Wu Liang-Liang)
...
CHINESE PHYSICS B. , 2011
Link:
http://ir.semi.ac.cn/han..
?
4
Room-Temperature Continuous-Wave Operation of InGaN-Based B..:
Zeng C (Zeng Chang)
;
Zhang SM (Zhang Shu-Ming)
;
Ji L (Ji Lian)
...
CHINESE PHYSICS LETTERS. , 2010
Link:
http://ir.semi.ac.cn/han..
?
5
Abnormal photoabsorption in high resistance GaN epilayer:
Liu WB (Liu Wen-Bao)
;
Zhao DG (Zhao De-Gang)
;
Jiang DS (Jiang De-Sheng)
...
ACTA PHYSICA SINICA. , 2010
Link:
http://ir.semi.ac.cn/han..
?
6
Role of Ga vacancies in enhancing the leakage current of Ga..:
Zhao DG (Zhao De-Gang)
;
Zhang S (Zhang Shuang)
;
Liu WB (Liu Wen-Bao)
...
CHINESE PHYSICS B. , 2010
Link:
http://ir.semi.ac.cn/han..
?
7
Microstructure and strain analysis of GaN epitaxial films u..:
Guo X (Guo Xi)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
...
CHINESE PHYSICS B. , 2010
Link:
http://ir.semi.ac.cn/han..
?
8
Evaluation of both composition and strain distributions in ..:
Guo X (Guo Xi)
;
Wang H (Wang Hui)
;
Jiang DS (Jiang De-Sheng)
...
CHINESE PHYSICS B. , 2010
Link:
http://ir.semi.ac.cn/han..
?
9
Influence of AlN buffer layer thickness on structural prope..:
Wu YX (Wu Yu-Xin)
;
Zhu JJ (Zhu Jian-Jun)
;
Chen GF (Chen Gui-Feng)
...
CHINESE PHYSICS B. , 2010
Link:
http://ir.semi.ac.cn/han..
?
10
Fabrication and Characterization of High Power InGaN Blue-V..:
Ji L (Ji Lian)
;
Zhang SM (Zhang Shu-Ming)
;
Jiang DS (Jiang De-Sheng)
...
CHINESE PHYSICS LETTERS. , 2010
Link:
http://ir.semi.ac.cn/han..
?
11
Structural and optical properties of Al1-xInxN epilayers on..:
Lu GJ (Lu Guo-Jun)
;
Zhu JJ (Zhu Jian-Jun)
;
Jiang DS (Jiang De-Sheng)
...
CHINESE PHYSICS B. , 2010
Link:
http://ir.semi.ac.cn/han..
?
12
Influence of penetrating V-pits on leakage current of GaN b..:
Zhang S (Zhang Shuang)
;
Zhao DG (Zhao De-Gang)
;
Liu ZS (Liu Zong-Shun)
...
ACTA PHYSICA SINICA. , 2009
Link:
http://ir.semi.ac.cn/han..
?
13
A new p-n structure ultraviolet photodetector with p(-)-GaN..:
Zhou M (Zhou Mei)
;
Zhao DG (Zhao De-Gang)
;
Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn
ACTA PHYSICA SINICA. , 2009
Link:
http://ir.semi.ac.cn/han..
?
14
The effect of single AlGaN interlayer on the structural pro..:
Wu YX (Wu Yu-Xin)
;
Zhu JJ (Zhu Jian-Jun)
;
Zhao DG (Zhao De-Gang)
...
CHINESE PHYSICS B. , 2009
Link:
http://ir.semi.ac.cn/han..
?
15
InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGa..:
Wang H (Wang Hui)
;
Zhu JH (Zhu Ji-Hong)
;
Jiang DS (Jiang De-Sheng)
...
CHINESE PHYSICS LETTERS. , 2009
Link:
http://ir.semi.ac.cn/han..
1-15
