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Zhelannov, Andrei V.
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1

Study of Characteristics of HEMT-Transistors Based on AlGaN..:

Zhelannov, Andrei V. ; Seleznev, Boris I. ; Fedorov, Dmitry G.
Nano Hybrids and Composites.  28 (2020)  - p. 149-154 , 2020
Link: https://doi.org/10.4028/..
 
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2

Application of plasma chemical treatment for manufacturing ..:

Zhelannov, A V ; Seleznev, B I
Journal of Physics: Conference Series.  2052 (2021)  1 - p. 012057 , 2021
Link: https://doi.org/10.1088/..
 
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3

Selective oxidation of AlGaAs aperture layers of a Vertical..:

Voropaev, K O ; Grebennikov, V A ; Zhelannov, A V..
Journal of Physics: Conference Series.  2052 (2021)  1 - p. 012051 , 2021
Link: https://doi.org/10.1088/..
 
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4

Profiles of ion-doped layers on gallium arsenide:

Seleznev, B I ; Fedorov, D G ; Zhelannov, A V
Journal of Physics: Conference Series.  1658 (2020)  1 - p. 012049 , 2020
Link: https://doi.org/10.1088/..
 
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5

Distributions of silicon implanted in GaN epitaxial layers:

Fedorov, D G ; Seleznev, B I ; Zhelannov, A V
Journal of Physics: Conference Series.  1658 (2020)  1 - p. 012012 , 2020
Link: https://doi.org/10.1088/..
 
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6

Ohmic Contacts to Gallium Nitride-Based Structures:

Zhelannov, A. V. ; Ionov, A. S. ; Seleznev, B. I..
Semiconductors.  54 (2020)  3 - p. 317-321 , 2020
Link: https://doi.org/10.1134/..
 
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7

Technology for forming micro devices based on gallium nitri..:

Zhelannov, A V ; Seleznev, B I ; Fedorov, D G
IOP Conference Series: Materials Science and Engineering.  939 (2020)  1 - p. 012082 , 2020
Link: https://doi.org/10.1088/..
 
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8

Methods for processing structures based on solid solutions ..:

Zhelannov, A V ; Seleznev, B I ; Fedorov, D G
IOP Conference Series: Materials Science and Engineering.  656 (2019)  1 - p. 012060 , 2019
Link: https://doi.org/10.1088/..
 
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9

Improvements in the performance of the n+ cap-layer GaN in ..:

Zhelannov, A V ; Seleznev, B I
IOP Conference Series: Materials Science and Engineering.  441 (2018)  - p. 012065 , 2018
Link: https://doi.org/10.1088/..
 
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10

Non-alloyed ohmic Cr/Pt/Au contacts to GaN based structures:

Zhelannov, A V ; Seleznev, B I
IOP Conference Series: Materials Science and Engineering.  441 (2018)  - p. 012045 , 2018
Link: https://doi.org/10.1088/..
 
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