E-LIB Suche - Ergebnisse für: Zheng, Zheyang

1

Investigating Forward Gate ESD Mechanism of Schottky-Type p..:

Sun, Jiahui ; Zheng, Zheyang ; Shu, Ji.
IEEE Electron Device Letters. 45 (2024) 7 - p. 1265-1268 , 2024

Link: https://doi.org/10.1109/..

2

Improving the Reverse-Recovery Performance of Si SJ-MOSFETs..:

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang.
IEEE Transactions on Power Electronics. 39 (2024) 5 - p. 5614-5623 , 2024

Link: https://doi.org/10.1109/..

3

GaN Power Integration Technology and Its Future Prospects:

Wei, Jin ; Zheng, Zheyang ; Tang, Gaofei...
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1365-1382 , 2024

Link: https://doi.org/10.1109/..

4

Gate Driver Design for SiC Power MOSFETs With a Low-Voltage..:

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang.
IEEE Transactions on Power Electronics. 39 (2024) 5 - p. 5558-5566 , 2024

Link: https://doi.org/10.1109/..

5

p-GaN gate power HEMT heterostructure as a versatile platfo..:

Ng, Yat Hon ; Zheng, Zheyang ; Zhang, Li...
Applied Physics Letters. 124 (2024) 4 - p. , 2024

Link: https://doi.org/10.1063/..

6

Protecting SiC JFET From Gate Overstress in GaN/SiC Cascode..:

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang.
IEEE Transactions on Power Electronics. 39 (2024) 5 - p. 5567-5575 , 2024

Link: https://doi.org/10.1109/..

7

A Gate Driver with a Low-Voltage GaN HEMT for False Turn-on..:

, In: 2024 IEEE Applied Power Electronics Conference and Exposition (APEC),

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang. - p. 724-728 , 2024

Link: https://doi.org/10.1109/..

8

GaN-Based Charge Trapping Memory With an AlN Interfacial La..:

Chen, Tao ; Zheng, Zheyang ; Feng, Sirui...
IEEE Electron Device Letters. 45 (2024) 7 - p. 1133-1136 , 2024

Link: https://doi.org/10.1109/..

9

Switching Performance of GaN $p$-FET-bridge (PFB-) HEMTs St..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Chen, Junting ; Chen, Tao ; Jiang, Zuoheng... - p. 107-110 , 2023

Link: https://doi.org/10.1109/..

10

Gate Characteristics of Enhancement-Mode Fully Depleted p-G..:

Sun, Jiahui ; Mouhoubi, Samir ; Silvestri, Marco...
IEEE Electron Device Letters. 44 (2023) 12 - p. 2015-2018 , 2023

Link: https://doi.org/10.1109/..

11

Impact of Inadequate Mg Activation on Dynamic Threshold Vol..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Sun, Jiahui ; Zheng, Zheyang ; Zhang, Li... - p. 24-27 , 2023

Link: https://doi.org/10.1109/..

12

Electroluminescence and Gate Carrier Dynamics in a Schottky..:

Feng, Sirui ; Liao, Hang ; Chen, Tao...
IEEE Electron Device Letters. 44 (2023) 10 - p. 1592-1595 , 2023

Link: https://doi.org/10.1109/..

13

Protection of SiC MOSFET from Negative Gate Voltage Spikes ..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Shu, Ji ; Sun, Jiahui ; Zheng, Zheyang. - p. 199-202 , 2023

Link: https://doi.org/10.1109/..

14

An Actively-Passivated p-GaN Gate HEMT With Screening Effec..:

Wu, Yanlin ; Wei, Jin ; Wang, Maojun...
IEEE Electron Device Letters. 44 (2023) 1 - p. 25-28 , 2023

Link: https://doi.org/10.1109/..

15

Conductivity Enhancement Induced by Confined Vicinal Hole S..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Liao, Hang ; Zheng, Zheyang ; Chen, Tao... - p. 231-234 , 2023

Link: https://doi.org/10.1109/..