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Zheng-Xuan, Zhang
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1

Radiation response of pseudo-MOS transistors fabricated in ..:

Da-Wei, Bi ; Zheng-Xuan, Zhang ; Shuai, Zhang...
Chinese Physics C.  33 (2009)  10 - p. 866-869 , 2009
Link: https://doi.org/10.1088/..
 
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2

Investigation on a solution to improve the irradiation reli..:

Wen-Jie, Yu ; Zheng-Xuan, Zhang ; Wei, He...
Chinese Physics C.  32 (2008)  12 - p. 989-991 , 2008
Link: https://doi.org/10.1088/..
 
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3

Total dose radiation effects on SOI NMOS transistors with d..:

Hao, Tian ; Zheng-Xuan, Zhang ; Wei, He...
Chinese Physics C.  32 (2008)  8 - p. 645-648 , 2008
Link: https://doi.org/10.1088/..
 
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4

Research on total-dose hardening for H-gate PD NMOSFET/SIMO..:

Cong, Qian ; Zheng-Xuan, Zhang ; Feng, Zhang.
Chinese Physics C.  32 (2008)  2 - p. 130-134 , 2008
Link: https://doi.org/10.1088/..
 
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5

Practical considerations in the design of SRAM cells on SOI:

Wei, He ; Zheng-xuan, Zhang ; En-xia, Zhang...
Microelectronics Journal.  39 (2008)  12 - p. 1829-1833 , 2008
Link: https://doi.org/10.1016/..
 
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6

Ionizing Dose Effect of Thermal Oxides Implanted with Si+Io..:

Ming, Chen ; Hong-Wei, Luo ; Zheng-Xuan, Zhang...
Chinese Physics Letters.  24 (2007)  6 - p. 1775-1777 , 2007
Link: https://doi.org/10.1088/..
 
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7

Improvement of total-dose irradiation hardness of silicon-o..:

En-Xia, Zhang ; Cong, Qian ; Zheng-Xuan, Zhang...
Chinese Physics.  15 (2006)  4 - p. 792-797 , 2006
Link: https://doi.org/10.1088/..
 
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8

Effect of the implantation of fluorine on the mobility of c..:

, In: Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.,
Zhong-Shan Zheng ; Zhong-Li Liu ; Guo-Qiang Zhang... - p. 277,278 , 2004
Link: https://doi.org/10.1109/..
 
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9

A New Structure of Silicon-on-Insulator Metal-Oxide-Semicon..:

Ming, Zhu ; Qing, Lin ; Zheng-Xuan, Zhang.
Chinese Physics Letters.  20 (2003)  5 - p. 767-769 , 2003
Link: https://doi.org/10.1088/..
 
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10

A New silicon-on-Insulator Structure of Metal-Oxide-Semicon..:

Qing, Lin ; Zheng-Xuan, Zhang ; Ming, Zhu...
Chinese Physics Letters.  20 (2002)  1 - p. 158-160 , 2002
Link: https://doi.org/10.1088/..
 
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11

Metastable Electron Traps in Modified Silicon-on-Insulator ..:

Dai, Li-Hua ; Bi, Da-Wei ; Zhang, Zheng-Xuan...
Chinese Physics Letters.  35 (2018)  5 - p. 056101 , 2018
Link: https://doi.org/10.1088/..
 
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12

Research on the radiation hardened SOI devices with single-..:

Dai, Li-Hua ; Bi, Da-Wei ; Hu, Zhi-Yuan...
Chinese Physics B.  27 (2018)  4 - p. 048503 , 2018
Link: https://doi.org/10.1088/..
 
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13

Influence of characteristics' measurement sequence on total..:

Xie, Xin ; Bi, Da-Wei ; Hu, Zhi-Yuan...
Chinese Physics B.  27 (2018)  12 - p. 128501 , 2018
Link: https://doi.org/10.1088/..
 
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14

Enhanced radiation-induced narrow channel effects in 0.13-$..:

Zhang, Meng-Ying ; Hu, Zhi-Yuan ; Bi, Da-Wei..
Chinese Physics B.  27 (2018)  2 - p. 028501 , 2018
Link: https://doi.org/10.1088/..
 
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15

Influence of Tilted Angle on Effective Linear Energy Transf..:

Zhang, Le-Qing ; Lu, Jian ; Xu, Jia-Ling...
Chinese Physics Letters.  34 (2017)  11 - p. 118504 , 2017
Link: https://doi.org/10.1088/..
 
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