Zhong, Yunzhe
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7

Enhanced Gate Reliability of Ohmic-Like p-GaN Gate HEMT Wit..:

Wang, Haodong ; Gao, Hongwei ; Chen, Xin...
IEEE Transactions on Electron Devices.  71 (2024)  4 - p. 2355-2360 , 2024
 
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8

Equivalent circuit model of GaN high electron mobility tran..:

Li, Fangqing ; Wang, Haodong ; Chen, Xin...
Journal of Physics D: Applied Physics.  56 (2023)  38 - p. 385102 , 2023
 
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9

Preoperative hydronephrosis represents an unfavorable progn..:

Zhong, Xin ; Pan, Yunzhe ; Xiong, Yang.
Asian Journal of Surgery.  46 (2023)  4 - p. 1651-1652 , 2023
 
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14

In-situ atomic-level observation of reversible first-order ..:

, In: 2022 International Electron Devices Meeting (IEDM),
Zheng, Yonghui ; Xin, Tianjiao ; Yang, Jing... - p. 6.3.1-6.3.4 , 2022
 
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