Zhou, Xintian
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2

Optimized Design of Trench Termination for High-Voltage β-G..:

, In: Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering,
Zhang, Shiyu ; Hu, Dongqing ; Zhou, Xintian.. - p. 66-72 , 2023
 
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3

Simulation Study on SEB Resistance of Silicon-based RESURF ..:

, In: 2023 5th International Conference on Power and Energy Technology (ICPET),
Jiang, Jiaye ; Hu, Dongqing ; Li, Rongjia... - p. 198-205 , 2023
 
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4

SiC Trench MOSFET With Embedded Schottky Super Barrier Rect..:

Zhou, Xintian ; Zhang, Shida ; Li, Mingwei...
IEEE Transactions on Electron Devices.  70 (2023)  11 - p. 5786-5794 , 2023
 
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5

Degradation of VDMOS Under Simultaneous and Sequential Stre..:

Li, Xinyu ; Jia, Yunpeng ; Zhou, Xintian...
IEEE Transactions on Electron Devices.  70 (2023)  6 - p. 2947-2955 , 2023
 
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6

Effect of Back-P-Region on Reverse Recovery Oscillation Sup..:

, In: 2023 5th International Conference on Power and Energy Technology (ICPET),
Zou, Hongyu ; Wu, Yu ; He, Feng... - p. 211-216 , 2023
 
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7

Numerical demonstration of SiC trench MOSFET with integrate..:

Wang, Lihao ; Jia, Yunpeng ; Zhou, Xintian...
Japanese Journal of Applied Physics.  62 (2023)  4 - p. 044002 , 2023
 
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8

Improvement of reverse recovery characteristics through int..:

, In: Proceedings of the 2023 7th International Conference on Electronic Information Technology and Computer Engineering,
Zhang, Kang ; Wu, Yu ; Hu, Dongqing.. - p. 1601-1608 , 2023
 
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9

LOW Inductance High Power IGBT Module:

, In: 2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),
Zhao, Lei ; Jia, Yunpeng ; Zhou, Xintian. - p. 116-120 , 2023
 
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10

Design and simulation study of multi-trench termination for..:

, In: Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering,
Zhao, Chongning ; Hu, Dongqing ; Zheng, Yuechao... - p. 498-502 , 2022
 
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11

Gate Bias Dependence of VTH Degradation in Planar and Trenc..:

Li, Yuan ; Zhou, Xintian ; Zhao, Yuanfu...
IEEE Transactions on Electron Devices.  69 (2022)  5 - p. 2521-2527 , 2022
 
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12

Design and Simulation of 1.2kV SiC Super-junction SBD with ..:

, In: 2022 4th International Conference on Power and Energy Technology (ICPET),
Lu, Xiangluan ; Jia, Yunpeng ; Zhou, Xintian... - p. 242-246 , 2022
 
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13

Simulation study of 1200V SiC-based trench-gate MOSFET with..:

, In: Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering,
Zheng, Yuechao ; Hu, Dongqing ; Zhao, Chongning... - p. 605-610 , 2022
 
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14

Degradation of 650 V SiC double-trench MOSFETs under repeti..:

Wang, Lihao ; Jia, Yunpeng ; Zhou, Xintian...
Microelectronics Reliability.  133 (2022)  - p. 114545 , 2022
 
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15

Heavy-ion induced gate damage and thermal destruction in do..:

Wang, Lihao ; Jia, Yunpeng ; Zhou, Xintian...
Microelectronics Reliability.  137 (2022)  - p. 114770 , 2022
 
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