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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
2
2.7 kVβ- Ga2O3 Heterojunction Barrier Schottky Diode with L..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
3
1-kV β-Ga2O3UMOSFET with Quasi-Inversion Nitrogen-Ion-Impla..:
, In:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
9
Enhanced Gate Breakdown in β-Ga2O3HJFET through a NiOx/GaOx..:
, In:
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2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ,
15