Zhou, Xuanze
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2

2.7 kVβ- Ga2O3 Heterojunction Barrier Schottky Diode with L..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Hao, Weibing ; Xu, Guangwei ; Wu, Feihong... - p. 244-247 , 2024
 
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3

1-kV β-Ga2O3UMOSFET with Quasi-Inversion Nitrogen-Ion-Impla..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Liu, Qi ; Zhou, Xuanze ; Wong, Man Hoi... - p. 236-239 , 2024
 
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4

Vertical Vertical β-Ga₂O₃ Power Diodes: From Interface Engi..:

Wen, Junpeng ; Hao, Weibing ; Han, Zhao...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1606-1617 , 2024
 
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9

Enhanced Gate Breakdown in β-Ga2O3HJFET through a NiOx/GaOx..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Zhou, Xuanze ; Liu, Qi ; Xu, Guangwei... - p. 212-215 , 2024
 
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10

Vertical β-Ga2O3 Power Transistors: Fundamentals, Designs, ..:

Zhou, Jingbo ; Zhou, Xuanze ; Liu, Qi...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1513-1522 , 2024
 
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11

Reservoir Computing Based on Oxygen-Vacancy-Mediated X-ray ..:

Liu, Yan ; Yu, Shunjie ; Zhang, Zhongfang...
ACS Applied Materials & Interfaces.  16 (2024)  19 - p. 24871-24878 , 2024
 
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13

Realizing High Stability of Threshold Voltage in NiO/β-Ga2O..:

Jiang, Zhuolin ; Deng, Hongru ; Zhou, Xuanze...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1598-1605 , 2024
 
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14

Self-Powered a-SnOx/c-Ga2O3 Pn Heterojunction Solar-Blind P..:

Zeng, Yan ; Huang, Hong ; Zhao, Xiaolong...
IEEE Electron Device Letters.  44 (2023)  12 - p. 2003-2006 , 2023
 
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15

Selective Area Carrier Concentration Modulation of Single C..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
He, Qiming ; Li, Qiuyan ; Zhou, Xuanze... - p. 1-3 , 2023
 
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