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Zhou, Zuopu
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1

Investigation of Charge Trapping Aggravation Induced by Ant..:

Zhou, Zuopu ; Jiao, Leming ; Zheng, Zijie...
IEEE Transactions on Electron Devices.  , 2024
Link: https://doi.org/10.1109/..
 
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2

The Impact of Thermal Noise in Multi-Domain Hf-based Antife..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Luo, Sheng ; Zheng, Zijie ; Zhou, Zuopu.. - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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3

BEOL-Compatible MFMIS Ferroelectric/Anti-Ferroelectric FETs..:

Zheng, Zijie ; Jiao, Leming ; Zhang, Dong...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1827-1833 , 2024
Link: https://doi.org/10.1109/..
 
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4

Hydrogen-Related Instability of IGZO Field-Effect Transisto..:

Liu, Gan ; Kong, Qiwen ; Zhang, Dong...
IEEE Transactions on Electron Devices.  71 (2024)  5 - p. 2995-3001 , 2024
Link: https://doi.org/10.1109/..
 
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5

Effects of Source/Drain Electrodes on Thermal Stability of ..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Kong, Qiwen ; Liu, Long ; Han, Kaizhen... - p. 1-2 , 2024
Link: https://doi.org/10.1109/..
 
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6

First Demonstration of BEOL-compatible Amorphous InGaZnOx C..:

, In: 2023 International Conference on IC Design and Technology (ICICDT),
Zheng, Zijie ; Xie, Jiawei ; Sun, Yiyuan... - p. 29-33 , 2023
Link: https://doi.org/10.1109/..
 
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7

First Demonstration of BEOL-Compatible MFMIS Fe-FETs with 3..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Wang, Xiaolin ; Zheng, Zijie ; Kong, Qiwen... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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8

Grain Size Reduction of Ferroelectric HZO Enabled by a Nove..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Zhang, Dong ; Wu, Jixuan ; Kong, Qiwen... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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9

First BEOL-compatible IGZO Ferroelectic-Modulated Diode wit..:

, In: 2023 International Electron Devices Meeting (IEDM),
Jiao, Leming ; Zhou, Zuopu ; Zheng, Zijie... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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10

Inversion-Type Ferroelectric Capacitive Memory and Its 1-Kb..:

Zhou, Zuopu ; Jiao, Leming ; Zhou, Jiuren...
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 1641-1647 , 2023
Link: https://doi.org/10.1109/..
 
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11

First Demonstration of BEOL-Compatible Write-Enhanced Ferro..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Jiao, Leming ; Han, Kaizhen ; Zhou, Zuopu... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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12

First Study of the Charge Trapping Aggravation Induced by A..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Zhou, Zuopu ; Jiao, Leming ; Zheng, Zijie... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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13

Non-Destructive-Read 1T1C Ferroelectric Capacitive Memory C..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Zhou, Zuopu ; Jiao, Leming ; Kong, Qiwen... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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14

Grain Size Reduction of Ferroelectric HZO Enabled by Solid ..:

Zhang, Dong ; Wu, Jixuan ; Kong, Qiwen...
IEEE Transactions on Electron Devices.  70 (2023)  12 - p. 6665-6672 , 2023
Link: https://doi.org/10.1109/..
 
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15

Back-End-of-Line-Compatible Fin-Gate ZnO Ferroelectric Fiel..:

Kong, Qiwen ; Liu, Long ; Zheng, Zijie...
IEEE Transactions on Electron Devices.  70 (2023)  4 - p. 2059-2066 , 2023
Link: https://doi.org/10.1109/..
 
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