Zhu, Renqiang
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1

Study of drain-induced channel effects in vertical GaN junc..:

Chen, Zengfa ; Yue, Wen ; Zhu, Renqiang...
Semiconductor Science and Technology.  39 (2024)  7 - p. 075002 , 2024
 
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2

Enhancing Key Performance of Vertical GaN Schottky Barrier ..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Li, Bo ; Ma, Zhengweng ; Gao, Linfei... - p. 252-254 , 2024
 
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3

Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes..:

Liu, Xinke ; Li, Bo ; Wu, Junye...
IEEE Journal of the Electron Devices Society.  12 (2024)  - p. 34-38 , 2024
 
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4

Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW..:

Li, Jialun ; Zhu, Renqiang ; Wong, Ka Ming.
IEEE Journal of the Electron Devices Society.  12 (2024)  - p. 318-321 , 2024
 
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5

Dynamic Reliability Assessment of Vertical GaN Trench MOSFE..:

Zhang, Yu ; Zhu, Renqiang ; Qu, Haolan...
IEEE Transactions on Device and Materials Reliability.  , 2024
 
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12

Thin-barrier heterostructures enabled normally-OFF GaN high..:

Jiang, Huaxing ; Zhu, Renqiang ; Lyu, Qifeng..
Semiconductor Science and Technology.  36 (2021)  3 - p. 034001 , 2021
 
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13

Improved sintering activity and piezoelectric properties of..:

Bian, Kan ; Gu, Qilin ; Zhu, Kongjun...
Journal of Materials Science: Materials in Electronics.  27 (2016)  8 - p. 8573-8579 , 2016
 
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14

Synthesis of (K,Na)NbO3 particles by traditional hydrotherm..:

Bai, Lin ; Zhu, Kongjun ; Qiu, Jinhao...
Research on Chemical Intermediates.  37 (2011)  2-5 - p. 185-193 , 2011
 
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15

Coprecipitation-assisted hydrothermal synthesis of PLZT hol..:

Zhu, Renqiang ; Zhu, Kongjun ; Qiu, Jinhao..
Materials Research Bulletin.  45 (2010)  8 - p. 969-973 , 2010
 
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