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Zhu, Zhengyun
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1

1540 V 21.8mΩ·cm2 4H-SiC lateral MOSFETs with DOUBLE RESURF..:

Liu, Li ; Wang, Jue ; Zhu, Zhengyun...
Solid-State Electronics.  211 (2024)  - p. 108829 , 2024
Link: https://doi.org/10.1016/..
 
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2

4H-SiC Trench-gate MOSFET with JTE termination:

, In: 2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),
Zhu, Zhengyun ; Ren, Na ; Xu, Hongyi.. - p. 4-7 , 2023
Link: https://doi.org/10.1109/..
 
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3

Exploring lemology teaching with "internet plus" flipped cl..:

Cao, Yu-Xin ; Xia, Shu-Lin ; Zhu, Zheng-Yun...
BMC Medical Education.  23 (2023)  1 - p. , 2023
Link: https://doi.org/10.1186/..
 
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4

1.2-kV Planar SiC MOSFETs With Improved Short-Circuit Capab..:

Lin, Chaobiao ; Ren, Na ; Xu, Hongyi...
IEEE Transactions on Electron Devices.  70 (2023)  9 - p. 4730-4736 , 2023
Link: https://doi.org/10.1109/..
 
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5

Experimental Investigations on Short-Circuit Capability of ..:

, In: 2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS),
Lin, Chaobiao ; Ren, Na ; Xu, Hongyi.. - p. 22-25 , 2023
Link: https://doi.org/10.1109/..
 
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6

Electrical Characterization and Analysis of 4H-SiC Lateral ..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Liu, Li ; Wang, Jue ; Wang, Zishi... - p. 366-369 , 2023
Link: https://doi.org/10.1109/..
 
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7

The Impact of the Hexagonal and Circular Cell Designs on th..:

Liu, Li ; Wu, Jiupeng ; Xu, Hongyi...
IEEE Transactions on Electron Devices.  69 (2022)  3 - p. 1226-1232 , 2022
Link: https://doi.org/10.1109/..
 
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8

The Effectiveness of Plaza Dancing on Psychological Well-Be..:

Bai, Zhenggang ; Li, Yixuan ; Yang, Yufan...
Frontiers in Psychology.  13 (2022)  - p. , 2022
Link: https://doi.org/10.3389/..
 
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9

Avalanche Reliability of Planar-gate SiC MOSFET with Varied..:

, In: 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Zhu, Zhengyun ; Ren, Na ; Xu, Hongyi.. - p. 231-234 , 2021
Link: https://doi.org/10.23919..
 
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10

Comparing Hexagonal and Circular Cell designs for SiC MPS D..:

, In: 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia),
Liu, Li ; Ren, Na ; Wu, Jiupeng... - p. 153-156 , 2021
Link: https://doi.org/10.1109/..
 
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11

The Impact of Process Conditions on Surge Current Capabilit..:

Xu, Hongyi ; Ren, Na ; Wu, Jiupeng...
Materials.  14 (2021)  3 - p. 663 , 2021
Link: https://doi.org/10.3390/..
 
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12

Degradation of 4H-SiC MOSFET body diode under repetitive su..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Zhu, Zhengyun ; Ren, Na ; Xu, Hongyi... - p. 182-185 , 2020
Link: https://doi.org/10.1109/..
 
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13

Reliability Analysis for Commercial SiC MOSFETs in Single P..:

, In: 2020 11th International Conference on Prognostics and System Health Management (PHM-2020 Jinan),
Wu, Hao ; Jiang, Chunyan ; Guo, Qing... - p. 481-485 , 2020
Link: https://doi.org/10.1109/..
 
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14

Investigation of Avalanche Capability of 1200V 4H-SiC MPS D..:

, In: 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Liu, Li ; Ren, Na ; Wu, Jiupeng... - p. 210-213 , 2020
Link: https://doi.org/10.1109/..
 
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15

Single Pulse Avalanche Robustness and Analysis for 1200-V S..:

, In: 2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS),
Liu, Li ; Ren, Na ; Zhu, Zhengyun... - p. 90-93 , 2020
Link: https://doi.org/10.1109/..
 
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