Search for persons
X
?
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) ,
2
4H-SiC Trench-gate MOSFET with JTE termination:
, In:
?
2022 19th China International Forum on Solid State Lighting & 2022 8th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS) ,
5
Experimental Investigations on Short-Circuit Capability of ..:
, In:
?
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
6
Electrical Characterization and Analysis of 4H-SiC Lateral ..:
, In:
?
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
9
Avalanche Reliability of Planar-gate SiC MOSFET with Varied..:
, In:
?
2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) ,
10
Comparing Hexagonal and Circular Cell designs for SiC MPS D..:
, In:
?
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
12
Degradation of 4H-SiC MOSFET body diode under repetitive su..:
, In:
?
2020 11th International Conference on Prognostics and System Health Management (PHM-2020 Jinan) ,
13
Reliability Analysis for Commercial SiC MOSFETs in Single P..:
, In:
?
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
14
Investigation of Avalanche Capability of 1200V 4H-SiC MPS D..:
, In:
?
2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) ,
15