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Zhu 祝, Jie-Jie 杰杰
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1

On-state performance enhancement of AlGaN/GaN Fin-HEMTs by ..:

Chen, Yi-Lin ; Zhu, Qing ; Zhang, Meng...
Applied Physics Letters.  125 (2024)  6 - p. , 2024
Link: https://doi.org/10.1063/..
 
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2

Effects of spacer layer thickness in InAlN/GaN double-chann..:

Guo, Si-Yin ; Zhu, Qing ; Chen, Yi-Lin...
Semiconductor Science and Technology.  39 (2024)  6 - p. 065014 , 2024
Link: https://doi.org/10.1088/..
 
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3

Influence of Upper Channel Layer Thickness on Traps in Doub..:

, In: 2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP),
Guo, Si-Yin ; Zhu, Qing ; Chen, Yi-Lin... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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4

Low-damage interface enhancement-mode AlN/GaN high electron..:

Liu 刘, Si-Yu 思雨 ; Zhu 祝, Jie-Jie 杰杰 ; Guo 郭, Jing-Shu 静姝...
Chinese Physics B.  32 (2023)  11 - p. 117302 , 2023
Link: https://doi.org/10.1088/..
 
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5

Effect of Source Field Plate Cracks on the Electrical Perfo..:

Bie, Ye-Nan ; Du, Cheng-Lin ; Cai, Xiao-Long...
Crystals.  12 (2022)  9 - p. 1195 , 2022
Link: https://doi.org/10.3390/..
 
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6

Demonstration of 16 THz V Johnson's figure-of-merit and 36 ..:

Wang, Peng-Fei ; Mi, Min-Han ; Zhang, Meng...
Applied Physics Letters.  120 (2022)  10 - p. , 2022
Link: https://doi.org/10.1063/..
 
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7

Investigating two-stage degradation of threshold voltage in..:

Lin, Yu-Shan ; Chen, Yi-Lin ; Chang, Ting-Chang...
Semiconductor Science and Technology.  37 (2022)  2 - p. 025017 , 2022
Link: https://doi.org/10.1088/..
 
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8

8.7 W/mm output power density and 42% power-added-efficienc..:

Liu, Jie-Long ; Zhu, Jie-Jie ; Mi, Min-Han...
Applied Physics Letters.  120 (2022)  5 - p. , 2022
Link: https://doi.org/10.1063/..
 
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9

Optimization of linearity at high electrical field for dual..:

Wang, Peng-Fei ; Mi, Min-Han ; Du, Xiang...
Applied Physics Letters.  121 (2022)  7 - p. , 2022
Link: https://doi.org/10.1063/..
 
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10

Trap analysis of composite 2D–3D channel in AlGaN/GaN/grade..:

Hu, Sheng ; Yang, Ling ; Mi, Min-Han...
Chinese Physics B.  29 (2020)  8 - p. 087305 , 2020
Link: https://doi.org/10.1088/..
 
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11

Negative bias-induced threshold voltage instability and zen..:

Zhu, Qing ; Ma, Xiao-Hua ; Chen, Yi-Lin...
Chinese Physics B.  29 (2020)  4 - p. 047304 , 2020
Link: https://doi.org/10.1088/..
 
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12

Interface and border trapping effects in normally-off Al2O3..:

Jing, Si-Qi ; Ma, Xiao-Hua ; Zhu, Jie-Jie...
Chinese Physics B.  29 (2020)  10 - p. 107302 , 2020
Link: https://doi.org/10.1088/..
 
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13

Effects of Low-Damage Plasma Treatment on the Channel 2DEG ..:

Bao, SiQin-GaoWa ; Zhu, Jie-Jie ; Ma, Xiao-Hua...
Chinese Physics Letters.  37 (2020)  2 - p. 027301 , 2020
Link: https://doi.org/10.1088/..
 
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14

Method of evaluating interface traps in Al2O3/AlGaN/GaN hig..:

Bao, Si-Qin-Gao-Wa ; Ma, Xiao-Hua ; Chen, Wei-Wei...
Chinese Physics B.  28 (2019)  6 - p. 067304 , 2019
Link: https://doi.org/10.1088/..
 
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15

The effective Hamiltonian and propagator of a parabolic con..:

Pan, Xiao-Yin ; Zhu, Jie-Jie ; Li, Yu-Qi
Physica A: Statistical Mechanics and its Applications.  521 (2019)  - p. 293-309 , 2019
Link: https://doi.org/10.1016/..
 
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