de Guzman, Joyce Ann T.
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2

On the Correlation between Light-Induced Degradation and Mi..:

Jafari, Saman ; Zhu, Yan ; Rougieux, Fiacre...
ACS Applied Materials & Interfaces.  13 (2021)  5 - p. 6140-6146 , 2021
 
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Boron-oxygen related light-induced degradation of Si solar ..:

, In: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC),
Jafari, Saman ; Zhu, Yan ; Rougieux, Fiacre... - p. 0689-0692 , 2020
 
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Minority carrier traps in Czochralski-grown p-type silicon ..:

, In: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC),
 
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9

Formation and Elimination of Electrically Active Thermally-..:

De Guzman, Joyce Ann T ; Markevich, Vladimir P ; Mullins, Jack...
De Guzman , J A T , Markevich , V P , Mullins , J , Grant , N , Murphy , J D , Hiller , D , Halsall , M P & Peaker , A R 2022 , Formation and Elimination of Electrically Active Thermally-Induced Defects in Float-Zone-Grown Silicon Crystals . in R Brendel , C Ballif , S Dubois , S Glunz , G Hahn , J Poortmans , P Verlinden & A Weeber (eds) , SiliconPV 2021 - 11th International Conference on Crystalline Silicon Photovoltaics . , 130003 , AIP Conference Proceedings , vol. 2487 , American Institute of Physics , 11th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2021 , Hamelin, Virtual , Germany , 19/04/21 . https://doi.org/10.1063/5.0089287.  , 2022
 
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Electronic Properties and Structure of Boron–Hydrogen Compl..:

De Guzman, Joyce Ann T ; Markevich, Vladimir P ; Coutinho, José...
De Guzman , J A T , Markevich , V P , Coutinho , J , Abrosimov , N V , Halsall , M P & Peaker , A R 2021 , ' Electronic Properties and Structure of Boron–Hydrogen Complexes in Crystalline Silicon ' , Solar RRL . https://doi.org/10.1002/solr.202100459.  , 2021
 
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13

Acceptor-oxygen defects in silicon:The electronic propertie..:

De Guzman, Joyce Ann T ; Markevich, Vladimir P ; Hawkins, Ian D...
De Guzman , J A T , Markevich , V P , Hawkins , I D , Coutinho , J , Ayedh , H M , Binns , J , Abrosimov , N V , Lastovskii , S B , Crowe , I F , Halsall , M P & Peaker , A R 2021 , ' Acceptor-oxygen defects in silicon : The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer ' , Journal of Applied Physics , vol. 130 , no. 24 , 245703 . https://doi.org/10.1063/5.0076980.  , 2021
 
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Indium-Doped Silicon for Solar Cells—Light-Induced Degradat..:

De Guzman, Joyce Ann T ; Markevich, Vladimir P ; Hawkins, Ian D...
De Guzman , J A T , Markevich , V P , Hawkins , I D , Ayedh , H M , Coutinho , J , Binns , J , Falster , R , Abrosimov , N V , Crowe , I F , Halsall , M P & Peaker , A R 2021 , ' Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level Traps ' , Physica Status Solidi (A) Applications and Materials Science . https://doi.org/10.1002/pssa.202100108.  , 2021
 
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