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yun, Nick
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1

Package Design and Analysis of a 20-kV Double-Sided Silicon..:

Zhang, Zichen ; Arriola, Emmanuel ; Nicholas, Carl...
IEEE Transactions on Components, Packaging and Manufacturing Technology.  14 (2024)  5 - p. 776-783 , 2024
Link: https://doi.org/10.1109/..
 
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2

Packaging of 20 kV Double-Side Cooled Silicon Carbide Diode..:

, In: 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe),
Zhang, Zichen ; Nicholas, Carl ; Emmanuel, Arriola... - p. P.1-P.6 , 2023
Link: https://doi.org/10.23919..
 
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3

Static, Dynamic, and Short-circuit Characteristics of Split..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Kim, Dongyoung ; DeBoer, Skylar ; Mancini, Stephen A... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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4

Packaging of a 10-kV Double-Side Cooled Silicon Carbide Dio..:

Zhang, Zichen ; Lu, Shengchang ; Wang, Boyan...
IEEE Transactions on Power Electronics.  37 (2022)  12 - p. 14462-14470 , 2022
Link: https://doi.org/10.1109/..
 
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5

The Effect of Deep JFET and P-Well Implant of 1.2kV 4H-SiC ..:

Kim, Dongyoung ; Yun, Nick ; Morgan, Adam J..
IEEE Journal of the Electron Devices Society.  10 (2022)  - p. 989-995 , 2022
Link: https://doi.org/10.1109/..
 
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6

Comparative Study of 6.5 kV 4H-SiC Discrete Packaged MOSFET..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Yun, Nick ; Lynch, Justin ; Morgan, Adam J... - p. 249-252 , 2022
Link: https://doi.org/10.1109/..
 
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7

Detailed Analysis on Determining Effective Dose for Various..:

Yun, Nick ; Sung, Woongje
IEEE Transactions on Electron Devices.  69 (2022)  7 - p. 3826-3832 , 2022
Link: https://doi.org/10.1109/..
 
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8

Packaging of a 15-kV Silicon Carbide MOSFET With Insulation..:

, In: 2022 IEEE Energy Conversion Congress and Exposition (ECCE),
Zhang, Zichen ; Lu, Shengchang ; Nicholas, Carl... - p. 1-4 , 2022
Link: https://doi.org/10.1109/..
 
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9

A New Layout Method for Junction Field Effect Transistors (..:

, In: 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Lynch, Justin ; Yun, Nick ; Jang, Seung Yup.. - p. 127-131 , 2022
Link: https://doi.org/10.1109/..
 
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10

Channel Design Optimization for 1.2-kV 4H-SiC MOSFET Achiev..:

Kim, Dongyoung ; Yun, Nick ; Jang, Seung Yup..
IEEE Journal of the Electron Devices Society.  10 (2022)  - p. 495-503 , 2022
Link: https://doi.org/10.1109/..
 
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11

An Inclusive Structural Analysis on the Design of 1.2kV 4H-..:

Kim, Dongyoung ; yun, Nick ; Jang, Seung Yup..
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 804-812 , 2021
Link: https://doi.org/10.1109/..
 
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12

Non-Isothermal Simulations to Optimize SiC MOSFETs for Enha..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Kim, Dongyoung ; Morgan, Adam J ; Yun, Nick... - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
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13

Experimental Analysis of 600V 4H-SiC Vertical and Lateral M..:

Yun, Nick ; Lynch, Justin ; Sung, Woong Je
Materials Science Forum.  1004 (2020)  - p. 830-836 , 2020
Link: https://doi.org/10.4028/..
 
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14

Design Considerations for High Voltage SiC Power Devices: A..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Lynch, Jusitn ; Yun, Nick ; Sung, Woongje - p. 223-226 , 2019
Link: https://doi.org/10.1109/..
 
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15

A New Junction Barrier Schottky Diode Using a Novel Lateral..:

, In: 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA),
Lynch, Justin ; Yun, Nick ; Sung, Woongje - p. 125-129 , 2019
Link: https://doi.org/10.1109/..
 
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