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Leitungsmechanismen in thermisch oxidiertem Siliciumdioxid,..
Hahn-Meitner-Institut für Kernforschung (Berlin-West). Berichte. HMI-B 280
Haack, Dietmar
, 1978
Exemplar:
Zentrale:Magazin
dk 4208
RT Dissertation/Thesis T1 <Title>Leitungsmechanismen in thermisch oxidiertem Siliciumdioxid, das mit Hilfe der Ionenimplantation dotiert wird</Title> UL https://suche.suub.uni-bremen.de/peid=B05881616&Exemplar=1&LAN=DE A1 Haack, Dietmar YR 1978 NO 137 S T3 Hahn-Meitner-Institut für Kernforschung (Berlin-West). Berichte. HMI-B 280 LK http://katalog.suub.uni-bremen.de/DB=1/LNG=DU/CMD?ACT=SRCHA&IKT=8000&TRM=00502579* CN Magazin: dk 4208 SF ELIB - SuUB Bremen
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