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1 Ergebnisse
1
A 55nm 0.55v 6T SRAM with variation-tolerant dual-tracking ..:
, In:
Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design
,
Lin, Yi-Wei
;
Yang, Hao-I
;
Lin, Geng-Cing
... - p. 79-84 , 2012
Link:
https://dl.acm.org/doi/10.1145/2333660.2333682
RT T1 <cTitle>Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design</cTitle>: T1 <Title>A 55nm 0.55v 6T SRAM with variation-tolerant dual-tracking word-line under-drive and data-aware write-assist</Title> UL https://suche.suub.uni-bremen.de/peid=acm-2333682&Exemplar=1&LAN=DE A1 Lin, Yi-Wei A1 Yang, Hao-I A1 Lin, Geng-Cing A1 Chang, Chi-Shin A1 Chuang, Ching-Te A1 Hwang, Wei A1 Chen, Chia-Cheng A1 Shih, Willis A1 Huang, Huan-Shun PB ACM YR 2012 K1 data-aware write-assist (dawa) K1 static random access memory (sram) K1 word-line under-drive (wlud) K1 Hardware K1 Integrated circuits K1 Semiconductor memory K1 Static memory SP 79 OP 84 LK http://dx.doi.org/https://dl.acm.org/doi/10.1145/2333660.2333682 DO https://dl.acm.org/doi/10.1145/2333660.2333682 SF ELIB - SuUB Bremen
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