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1 Ergebnisse
1
Enhance Algan/Gan Hemts Electrical Performance by Using Pat..:
, In:
Proceedings of the 2019 2nd International Conference on Electronics, Communications and Control Engineering
,
Yi, Chen-Kai
;
Chien, Cheng-Yen
;
Chan, Chien-Tsun
.. - p. 88-91 , 2019
Link:
https://dl.acm.org/doi/10.1145/3324033.3324039
RT T1 <cTitle>Proceedings of the 2019 2nd International Conference on Electronics, Communications and Control Engineering</cTitle>: T1 <Title>Enhance Algan/Gan Hemts Electrical Performance by Using Patterned Sapphire Substrate</Title> UL https://suche.suub.uni-bremen.de/peid=acm-3324039&Exemplar=1&LAN=DE A1 Yi, Chen-Kai A1 Chien, Cheng-Yen A1 Chan, Chien-Tsun A1 Pai, Chia-Wei A1 Kuan, Chieh-Hsiung PB ACM YR 2019 K1 Defects K1 Epitaxy K1 Gallium nitride K1 High electron mobility transistor K1 Metalorganic chemical vapor deposition K1 Patterned sapphire substrate K1 Hardware K1 Integrated circuits SP 88 OP 91 LK http://dx.doi.org/https://dl.acm.org/doi/10.1145/3324033.3324039 DO https://dl.acm.org/doi/10.1145/3324033.3324039 SF ELIB - SuUB Bremen
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