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1 Ergebnisse
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Simulation study of 1200V SiC-based trench-gate MOSFET with..:
, In:
Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering
,
Zheng, Yuechao
;
Hu, Dongqing
;
Zhao, Chongning
... - p. 605-610 , 2022
Link:
https://dl.acm.org/doi/10.1145/3573428.3573535
RT T1 <cTitle>Proceedings of the 2022 6th International Conference on Electronic Information Technology and Computer Engineering</cTitle>: T1 <Title>Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection</Title> UL https://suche.suub.uni-bremen.de/peid=acm-3573535&Exemplar=1&LAN=DE A1 Zheng, Yuechao A1 Hu, Dongqing A1 Zhao, Chongning A1 Jia, Yunpeng A1 Zhou, Xintian A1 Wu, Yu A1 Li, Ting PB ACM YR 2022 K1 Applied computing K1 Hardware K1 Physical sciences and engineering K1 Very large scale integration design K1 Hardware validation SP 605 OP 610 LK http://dx.doi.org/https://dl.acm.org/doi/10.1145/3573428.3573535 DO https://dl.acm.org/doi/10.1145/3573428.3573535 SF ELIB - SuUB Bremen
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