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Impurity diffusion in ion implanted AlN layers on sapphire ..:
Okumura, Hironori
;
Watanabe, Yasuhiro
;
Shibata, Tomohiko
...
Japanese Journal of Applied Physics. , 2022
Link:
https://aaltodoc.aalto.fi/handle/123456789/113362
RT Journal T1
Impurity diffusion in ion implanted AlN layers on sapphire substrates by thermal annealing
UL https://suche.suub.uni-bremen.de/peid=base-ftaaltouniv:oai:aaltodoc.aalto.fi:123456789_113362&Exemplar=1&LAN=DE A1 Okumura, Hironori A1 Watanabe, Yasuhiro A1 Shibata, Tomohiko A1 Yoshizawa, Kohei A1 Uedono, Akira A1 Tokunaga, Hiroki A1 Koseki, Shuuichi A1 Arimura, Tadanobu A1 Suihkonen, Sami A1 Palacios, Tomás PB Japan Society of Applied Physics YR 2022 K1 AlN K1 annealing K1 donor K1 electrical property K1 impurity diffusion K1 ion implantation K1 positron annihilation spectroscopy JF Japanese Journal of Applied Physics LK http://dx.doi.org/https://aaltodoc.aalto.fi/handle/123456789/113362 DO https://aaltodoc.aalto.fi/handle/123456789/113362 SF ELIB - SuUB Bremen
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