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1 Ergebnisse
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Accurate statistical extraction of AlGaN/GaN HEMT device pa..:
Kom Kammeugne, R
;
Leroux, C
;
Cluzel, J
...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2021.108078. , 2021
Link:
https://cea.hal.science/cea-03250807
RT Journal T1 <Title>Accurate statistical extraction of AlGaN/GaN HEMT device parameters using the Y-function</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftanrparis:oai:HAL:cea-03250807v1&Exemplar=1&LAN=DE A1 Kom Kammeugne, R A1 Leroux, C A1 Cluzel, J A1 Vauche, L A1 Le Royer, C A1 Krakovinsky, A A1 Gwoziecki, R A1 Biscarrat, J A1 Gaillard, F A1 Charles, M A1 Bano, E A1 Ghibaudo, G PB HAL CCSD; Elsevier YR 2021 K1 Statistical electrical characterization K1 Y-functionNormally-off K1 High-electron-mobility-transistor (HEMT) K1 Gallium nitride (GaN) K1 Electron mobility2 K1 DEG K1 [SPI]Engineering Sciences [physics] K1 [PHYS]Physics [physics] JF info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2021.108078 LK http://dx.doi.org/https://cea.hal.science/cea-03250807 DO https://cea.hal.science/cea-03250807 SF ELIB - SuUB Bremen
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