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1 Ergebnisse
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Direct band-gap crossover in epitaxial monolayer boron nitr..:
Elias, Christine
;
Valvin, Pierre
;
Pelini, Thomas
...
info:eu-repo/semantics/altIdentifier/doi/10.1038/s41467-019-10610-5. , 2019
Link:
https://hal.science/hal-02156532
RT Journal T1 <Title>Direct band-gap crossover in epitaxial monolayer boron nitride</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftanrparis:oai:HAL:hal-02156532v1&Exemplar=1&LAN=DE A1 Elias, Christine A1 Valvin, Pierre A1 Pelini, Thomas A1 Summerfeld, Alex A1 Mellor, Chris A1 Cheng, T.S A1 Eaves, L A1 Foxon, C.T A1 Beton, Peter A1 Novikov, Sergei A1 Gil, Bernard A1 Cassabois, Guillaume PB HAL CCSD; Nature Publishing Group YR 2019 K1 Boron nitridewideband gap semiconductors2D Materialsvan der Waals epitaxy K1 [PHYS.COND.CM-GEN]Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other] K1 [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] JF info:eu-repo/semantics/altIdentifier/doi/10.1038/s41467-019-10610-5 LK http://dx.doi.org/https://hal.science/hal-02156532 DO https://hal.science/hal-02156532 SF ELIB - SuUB Bremen
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