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1 Ergebnisse
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Combination of selective area sublimation of p-GaN and regr..:
Ngo, Thi Huong
;
Comyn, Rémi
;
Chenot, Sébastien
...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2021.108210. , 2022
Link:
https://hal.science/hal-03467546
RT Journal T1 <Title>Combination of selective area sublimation of p-GaN and regrowth of AlGaN for the co-integration of enhancement mode and depletion mode high electron mobility transistors</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftanrparis:oai:HAL:hal-03467546v1&Exemplar=1&LAN=DE A1 Ngo, Thi Huong A1 Comyn, Rémi A1 Chenot, Sébastien A1 Brault, Julien A1 Damilano, Benjamin A1 Vezian, Stephane A1 Frayssinet, Eric A1 Cozette, Flavien A1 Defrance, N A1 Lecourt, François A1 Labat, Nathalie A1 Maher, Hassan A1 Cordier, Yvon PB HAL CCSD; Elsevier YR 2022 K1 HEMT K1 GaN K1 Selective sublimation K1 Regrowth K1 [SPI.TRON]Engineering Sciences [physics]/Electronics K1 [SPI.MAT]Engineering Sciences [physics]/Materials JF info:eu-repo/semantics/altIdentifier/doi/10.1016/j.sse.2021.108210 LK http://dx.doi.org/https://hal.science/hal-03467546 DO https://hal.science/hal-03467546 SF ELIB - SuUB Bremen
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