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1 Ergebnisse
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Selective sublimation of GaN and regrowth of AlGaN to co-in..:
Ngo, Thi Huong
;
Comyn, Rémi
;
Chenot, Sébastien
...
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jcrysgro.2022.126779. , 2022
Link:
https://hal.science/hal-03741626
RT Journal T1 <Title>Selective sublimation of GaN and regrowth of AlGaN to co-integrate enhancement mode and depletion mode high electron mobility transistors</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftanrparis:oai:HAL:hal-03741626v1&Exemplar=1&LAN=DE A1 Ngo, Thi Huong A1 Comyn, Rémi A1 Chenot, Sébastien A1 Brault, Julien A1 Nemoz, Maud A1 Vennéguès, Philippe A1 Damilano, Benjamin A1 Vézian, S A1 Frayssinet, Eric A1 Cozette, Flavien A1 Defrance, N A1 Lecourt, François A1 Labat, Nathalie A1 Maher, Hassan A1 Cordier, Yvon PB HAL CCSD; Elsevier YR 2022 K1 Selective sublimation K1 Local area epitaxy K1 Group III-nitrides K1 High electron mobility transistors K1 [SPI]Engineering Sciences [physics] JF info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jcrysgro.2022.126779 LK http://dx.doi.org/https://hal.science/hal-03741626 DO https://hal.science/hal-03741626 SF ELIB - SuUB Bremen
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