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1 Ergebnisse
1
Vertically Stacked-NanoWires MOSFETs in a Replacement Metal..:
Barraud, S
;
Lapras, V
;
Samson, M
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM.2016.7838441. , 2016
Link:
https://hal-cea.archives-ouvertes.fr/cea-01973383
RT Journal T1 <Title>Vertically Stacked-NanoWires MOSFETs in a Replacement Metal Gate Process with Inner Spacer and SiGe Source/Drain</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftccsdartic:oai:HAL:cea-01973383v1&Exemplar=1&LAN=DE A1 Barraud, S A1 Lapras, V A1 Samson, M A1 Gaben, L A1 Grenouillet, L A1 Maffini-Alvaro, V A1 Morand, y A1 Daranlot, J A1 Rambal, N A1 Previtalli, B A1 Reboh, S A1 Tabone, C A1 Coquand, R A1 Augendre, E A1 Rozeau, O A1 Hartmann, J A1 Vizioz, C A1 Arvet, C A1 Pimenta-Barros, P A1 Posseme, N A1 Loup, V A1 Comboroure, C A1 Euvrard, C A1 Balan, V A1 Tinti, I A1 Audoit, G A1 Bernier, N A1 Cooper, D A1 Saghi, Z A1 Allain, F A1 Toffoli, A A1 Faynot, O A1 Vinet, M PB HAL CCSD YR 2016 K1 [SPI]Engineering Sciences [physics] JF info:eu-repo/semantics/altIdentifier/doi/10.1109/IEDM.2016.7838441 LK http://dx.doi.org/https://hal-cea.archives-ouvertes.fr/cea-01973383 DO https://hal-cea.archives-ouvertes.fr/cea-01973383 SF ELIB - SuUB Bremen
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