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1 Ergebnisse
1
Effect of Gate Structure on the Trapping Behavior of GaN Ju..:
Im, Ki-Sik
;
An, Sung Jin
;
Theodorou, Christoforos
...
info:eu-repo/semantics/altIdentifier/doi/10.1109/LED.2020.2991164. , 2020
Link:
https://hal.archives-ouvertes.fr/hal-02969750
RT Journal T1 <Title>Effect of Gate Structure on the Trapping Behavior of GaN Junctionless FinFETs</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftccsdartic:oai:HAL:hal-02969750v1&Exemplar=1&LAN=DE A1 Im, Ki-Sik A1 An, Sung Jin A1 Theodorou, Christoforos A1 Ghibaudo, Gérard A1 Cristoloveanu, Sorin A1 Lee, Jung-Hee PB HAL CCSD; Institute of Electrical and Electronics Engineers YR 2020 K1 GaN K1 Junctionless K1 Nanochannel K1 FinFET K1 Low-frequency noise K1 generation-recombination noise K1 Current collapse K1 [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics K1 [SPI.TRON]Engineering Sciences [physics]/Electronics JF info:eu-repo/semantics/altIdentifier/doi/10.1109/LED.2020.2991164 LK http://dx.doi.org/https://hal.archives-ouvertes.fr/hal-02969750 DO https://hal.archives-ouvertes.fr/hal-02969750 SF ELIB - SuUB Bremen
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