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1 Ergebnisse
1
Backside Fault Localization and Defect Physical Analysis of..:
Ghizzo, L
;
Guibaud, G
;
de Nardi, C
...
info:eu-repo/semantics/altIdentifier/doi/10.31399/asm.cp.istfa2023p0491. , 2023
Link:
https://hal.science/hal-04307540
RT Journal T1 <Title>Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftccsdartic:oai:HAL:hal-04307540v1&Exemplar=1&LAN=DE A1 Ghizzo, L A1 Guibaud, G A1 de Nardi, C A1 Jamin, F A1 Chazal, V A1 Trémouilles, D A1 Monflier, R A1 Richardeau, Frédéric A1 Bascoul, G A1 González, M A1 Trémouilles, David A1 Monflier, Richard PB HAL CCSD YR 2023 K1 HEMT p-GaN K1 fault localization K1 defect physical analysis K1 [SPI.NRJ]Engineering Sciences [physics]/Electric power K1 [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics JF info:eu-repo/semantics/altIdentifier/doi/10.31399/asm.cp.istfa2023p0491 LK http://dx.doi.org/https://hal.science/hal-04307540 DO https://hal.science/hal-04307540 SF ELIB - SuUB Bremen
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