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Dislocations stopped by the Σ = 9 (122 ) grain boundary in ..:
Thibault-Desseaux, J
;
Putaux, J.L
;
Bourret, A
.
info:eu-repo/semantics/altIdentifier/doi/10.1051/jphys:0198900500180252500. , 1989
Link:
https://hal.archives-ouvertes.fr/jpa-00211079
RT Journal T1 <Title>Dislocations stopped by the Σ = 9 (122 ) grain boundary in Si. An HREM study of thermal activation</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftccsdartic:oai:HAL:jpa-00211079v1&Exemplar=1&LAN=DE A1 Thibault-Desseaux, J A1 Putaux, J.L A1 Bourret, A A1 Kirchner, H.O.K PB HAL CCSD YR 1989 K1 dislocation climb K1 electron microscope examination of materials K1 elemental semiconductors K1 grain boundaries K1 screw dislocations K1 silicon K1 slip K1 [PHYS.HIST]Physics [physics]/Physics archives JF info:eu-repo/semantics/altIdentifier/doi/10.1051/jphys:0198900500180252500 LK http://dx.doi.org/https://hal.archives-ouvertes.fr/jpa-00211079 DO https://hal.archives-ouvertes.fr/jpa-00211079 SF ELIB - SuUB Bremen
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