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1 Ergebnisse
1
Nouvelle méthode de profilométrie capacitive des porteurs l..:
Remaki, B
;
Balland, B
info:eu-repo/semantics/altIdentifier/doi/10.1051/rphysap:0198700220110138100. , 1987
Link:
https://hal.archives-ouvertes.fr/jpa-00245688
RT Journal T1 <Title>Nouvelle méthode de profilométrie capacitive des porteurs libres et des centres profonds dans les semiconducteurs</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftccsdartic:oai:HAL:jpa-00245688v1&Exemplar=1&LAN=DE A1 Remaki, B A1 Balland, B PB HAL CCSD; Société française de physique / EDP YR 1987 K1 carrier density K1 deep levels K1 electron traps K1 impurity distribution K1 free carrier distribution K1 deep trap distributions K1 semiconductors K1 impurity profiles K1 high frequency C V characteristics K1 nonequilibrium K1 fast correlator K1 space charge K1 [PHYS.HIST]Physics [physics]/Physics archives JF info:eu-repo/semantics/altIdentifier/doi/10.1051/rphysap:0198700220110138100 LK http://dx.doi.org/https://hal.archives-ouvertes.fr/jpa-00245688 DO https://hal.archives-ouvertes.fr/jpa-00245688 SF ELIB - SuUB Bremen
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