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1 Ergebnisse
1
Analyse des conditions de croissance de GaxIn(1- x)As/InP p..:
Porte, A
;
Lassalle, F
;
Pariset, C
...
info:eu-repo/semantics/altIdentifier/doi/10.1051/rphysap:01989002402014300. , 1989
Link:
https://hal.archives-ouvertes.fr/jpa-00246036
RT Journal T1
Analyse des conditions de croissance de GaxIn(1- x)As/InP par la méthode aux hydrures
UL https://suche.suub.uni-bremen.de/peid=base-ftccsdartic:oai:HAL:jpa-00246036v1&Exemplar=1&LAN=DE A1 Porte, A A1 Lassalle, F A1 Pariset, C A1 Cadoret, M A1 Chaput, L A1 Cadoret, R PB HAL CCSD; Société française de physique / EDP YR 1989 K1 gallium arsenide K1 III V semiconductors K1 indium compounds K1 semiconductor epitaxial layers K1 semiconductor growth K1 vapour phase epitaxial growth K1 nonequilibrium K1 semiconductor K1 vapour phase epitaxy K1 growth K1 hydride method K1 kinetic approach K1 reactions K1 dechlorination K1 surface K1 cracking K1 Ga sub x In sub 1 x As InP K1 [PHYS.HIST]Physics [physics]/Physics archives JF info:eu-repo/semantics/altIdentifier/doi/10.1051/rphysap:01989002402014300 LK http://dx.doi.org/https://hal.archives-ouvertes.fr/jpa-00246036 DO https://hal.archives-ouvertes.fr/jpa-00246036 SF ELIB - SuUB Bremen
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