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Dislocation multiplication in GaAs : inhibition by doping:
Djemel, A
;
Castaing, J
;
Burle-Durbec, N
.
info:eu-repo/semantics/altIdentifier/doi/10.1051/rphysap:01989002408077900. , 1989
Link:
https://hal.archives-ouvertes.fr/jpa-00246101
RT Journal T1 <Title>Dislocation multiplication in GaAs : inhibition by doping</Title> UL https://suche.suub.uni-bremen.de/peid=base-ftccsdartic:oai:HAL:jpa-00246101v1&Exemplar=1&LAN=DE A1 Djemel, A A1 Castaing, J A1 Burle-Durbec, N A1 Pichaud, B PB HAL CCSD; Société française de physique / EDP YR 1989 K1 crystal growth from melt K1 gallium arsenide K1 III V semiconductors K1 plastic deformation K1 semiconductor doping K1 semiconductor growth K1 thermal stresses K1 semiconductor K1 annealing K1 dislocation multiplication K1 doping K1 crystal quality K1 LEC K1 thermoelastic modelling K1 stresses K1 growth K1 dislocation structure K1 dislocation substructure K1 GaAs K1 [PHYS.HIST]Physics [physics]/Physics archives JF info:eu-repo/semantics/altIdentifier/doi/10.1051/rphysap:01989002408077900 LK http://dx.doi.org/https://hal.archives-ouvertes.fr/jpa-00246101 DO https://hal.archives-ouvertes.fr/jpa-00246101 SF ELIB - SuUB Bremen
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