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Silice UVCVD pour transistors MISFET autoalignés sur InP:

Courant, J.L ; Dimitriou, P ; Post, G
info:eu-repo/semantics/altIdentifier/doi/10.1051/rphysap:01990002509093500. , 1990

Link: https://hal.archives-ouvertes.fr/jpa-00246257

RT Journal
T1 <Title>Silice UVCVD pour transistors MISFET autoalignés sur InP</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftccsdartic:oai:HAL:jpa-00246257v1&Exemplar=1&LAN=DE
				
A1 Courant, J.L
A1 Dimitriou, P
A1 Post, G
PB HAL CCSD; Société française de physique / EDP
YR 1990
K1 annealing
K1 chemical vapour deposition
K1 density of solids
K1 electronic conduction in insulating thin films
K1 ellipsometry
K1 III V semiconductors
K1 indium compounds
K1 infrared spectra of inorganic solids
K1 insulated gate field effect transistors
K1 permittivity
K1 photochemistry
K1 silicon compounds
K1 semiconductor
K1 UVCVD silica
K1 photochemical technique
K1 silica deposition
K1 self aligned gate MISFET
K1 high temperature anneal
K1 rapid thermal annealing
K1 infrared transmission spectroscopy
K1 spectroscopic ellipsometry
K1 capacitance
K1 MIS diodes
K1 leakage current
K1 dehydration
K1 resistivity
K1 dielectric constant
K1 low temperature anneal
K1 density
K1 transconductance
K1 low current drift
K1 300 to 900 degC
K1 1 MHz
K1 InP substrate
K1 InP
K1 SiO sub 2
K1 [PHYS.HIST]Physics [physics]/Physics archives
JF info:eu-repo/semantics/altIdentifier/doi/10.1051/rphysap:01990002509093500
LK http://dx.doi.org/https://hal.archives-ouvertes.fr/jpa-00246257
DO https://hal.archives-ouvertes.fr/jpa-00246257
SF ELIB - SuUB Bremen

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