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Study on Raman spectra of GaMnAs:

Ma BS ; Wang WJ ; Su FH...
JOURNAL OF INFRARED AND MILLIMETER WAVES. , 2006

Link: http://ir.semi.ac.cn/handle/172111/10570

RT Journal
T1 <Title>Study on Raman spectra of GaMnAs</Title>

UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_10570&Exemplar=1&LAN=DE
				
A1 Ma BS
A1 Wang WJ
A1 Su FH
A1 Den JJ
A1 Jiang CP
A1 Liu HL
A1 Ding K
A1 Zhao JH
A1 Li GH
A1 Ma, BS, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
YR 2006
K1 Gamnas
K1 Raman Spectrum
K1 Coupled Plamon-lo-phonon Mode
K1 Hole Density
K1 Gaas
K1 Mocvd
K1 (Ga
K1 Films
K1 Mn)As
K1 Gan
K1 光电子学
K1 carrier density
K1 gallium arsenide
K1 atomic layer deposition
K1 photography--films
K1 finite volume method
K1 carrier concentration
K1 carrier lifetime
K1 carrier diffusion length
K1 electron lifetime (semiconductors)
K1 carrier mean free path
K1 mean free path
K1 carrier
K1 carrier mobility
K1 mobility
K1 carrier relaxation time
K1 relaxation time
K1 electrical conductivity transitions
K1 semiconductor-metal transition
K1 switching transitions
K1 electron mean free path
K1 electron mean free path (metals)
K1 electron relaxation time
K1 electron lifetime (metals)
K1 electron relaxation time (metals)
K1 hall mobility
K1 hole mobility
K1 libre parcours moyen de l electron
K1 mittlere freie elektronenweglaenge
K1 arseniures de gallium
K1 galliumarsenid
K1 atomic layer epitaxial growth
K1 ale
K1 mle growth
K1 molecular layer epitaxial growth
K1 chemical beam epitaxial growth
JF JOURNAL OF INFRARED AND MILLIMETER WAVES
LK http://ir.semi.ac.cn/handle/172111/10570
DO http://ir.semi.ac.cn/handle/172111/10570
SF ELIB - SuUB Bremen

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