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1 Ergebnisse
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Recombination property of nitrogen-acceptor-bound states in..:
Yang XD
;
Xu ZY
;
Sun Z
...
JOURNAL OF APPLIED PHYSICS. , 2006
Link:
http://ir.semi.ac.cn/handle/172111/10812
RT Journal T1
Recombination property of nitrogen-acceptor-bound states in ZnO
UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_10812&Exemplar=1&LAN=DE A1 Yang XD A1 Xu ZY A1 Sun Z A1 Sun BQ A1 Ding L A1 Wang FZ A1 Ye ZZ A1 Yang, XD, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail: young@red.semi.ac.cn YR 2006 K1 Molecular-beam Epitaxy K1 P-type Zno K1 Optical-properties K1 Exciton Formation K1 Photoluminescence K1 Films K1 Spectroscopy K1 Dynamics K1 Impurity K1 Energy K1 半导体物理 K1 atomic layer deposition K1 optical properties K1 photography--films K1 finite volume method K1 electron paramagnetic resonance spectroscopy K1 alpha-particle spectra K1 optical spectrometers K1 spectrum analysis K1 water-power K1 force and energy K1 atomic layer epitaxial growth K1 ale K1 mle growth K1 molecular layer epitaxial growth K1 chemical beam epitaxial growth K1 cbe K1 gas source mbe K1 gsmbe K1 metalorganic molecular beam epitaxy K1 mombe K1 ommbe K1 chemical vapour deposition K1 apcvd K1 chemical vapor deposition K1 cvd K1 laser cvd K1 laser-induced cvd K1 lpcvd K1 chemical vapour infiltration K1 chemical vapor infiltration K1 cvi K1 crystal growth from vapour K1 laser deposition K1 mocvd K1 metalorganic chemical vapour deposition K1 movpe K1 omcvd JF JOURNAL OF APPLIED PHYSICS LK http://ir.semi.ac.cn/handle/172111/10812 DO http://ir.semi.ac.cn/handle/172111/10812 SF ELIB - SuUB Bremen
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