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1 Ergebnisse
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Influence of AlN buffer layer thickness on structural prope..:
Wu YX (Wu Yu-Xin)
;
Zhu JJ (Zhu Jian-Jun)
;
Chen GF (Chen Gui-Feng)
...
CHINESE PHYSICS B. , 2010
Link:
http://ir.semi.ac.cn/handle/172111/11136
RT Journal T1
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_11136&Exemplar=1&LAN=DE A1 Wu YX (Wu Yu-Xin) A1 Zhu JJ (Zhu Jian-Jun) A1 Chen GF (Chen Gui-Feng) A1 Zhang SM (Zhang Shu-Ming) A1 Jiang DS (Jiang De-Sheng) A1 Liu ZS (Liu Zong-Shun) A1 Zhao DG (Zhao De-Gang) A1 Wang H (Wang Hui) A1 Wang YT (Wang Yu-Tian) A1 Yang H (Yang Hui) A1 Zhu, JJ, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. E-mail Address: jjzhu@red.semi.ac.cn YR 2010 K1 Gan K1 Si (111) Substrate K1 Metalorganic Chemical Vapour Deposition K1 Aln Buffer Layer K1 Algan Interlayer K1 : Vapor-phase Epitaxy K1 Crack-free Gan K1 Stress-control K1 Si(111) K1 Deposition K1 Alxga1-xn K1 Film K1 光电子学 K1 atomic layer deposition K1 stress control K1 sedimentation K1 reactively sputtered coatings K1 atomic layer epitaxial growth K1 ale K1 mle growth K1 molecular layer epitaxial growth K1 chemical beam epitaxial growth K1 cbe K1 gas source mbe K1 gsmbe K1 metalorganic molecular beam epitaxy K1 mombe K1 ommbe K1 chemical vapour deposition K1 apcvd K1 chemical vapor deposition K1 cvd K1 laser cvd K1 laser-induced cvd K1 lpcvd K1 chemical vapour infiltration K1 chemical vapor infiltration K1 cvi K1 crystal growth from vapour K1 laser deposition K1 mocvd K1 movpe K1 omcvd K1 omvpe K1 molecular beam epitaxial growth K1 mbe K1 migration-enhanced epitaxy K1 vapour phase epitaxial growth JF CHINESE PHYSICS B LK http://ir.semi.ac.cn/handle/172111/11136 DO http://ir.semi.ac.cn/handle/172111/11136 SF ELIB - SuUB Bremen
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