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1 Ergebnisse
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Role of Ga vacancies in enhancing the leakage current of Ga..:
Zhao DG (Zhao De-Gang)
;
Zhang S (Zhang Shuang)
;
Liu WB (Liu Wen-Bao)
...
CHINESE PHYSICS B. , 2010
Link:
http://ir.semi.ac.cn/handle/172111/11240
RT Journal T1
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_11240&Exemplar=1&LAN=DE A1 Zhao DG (Zhao De-Gang) A1 Zhang S (Zhang Shuang) A1 Liu WB (Liu Wen-Bao) A1 Hao XP (Hao Xiao-Peng) A1 Jiang DS (Jiang De-Sheng) A1 Zhu JJ (Zhu Jian-Jun) A1 Liu ZS (Liu Zong-Shun) A1 Wang H (Wang Hui) A1 Zhang SM (Zhang Shu-Ming) A1 Yang H (Yang Hui) A1 Wei L (Wei Long) A1 Zhao, DG, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. 电子邮箱地址: dgzhao@red.semi.ac.cn YR 2010 K1 Ga Vacancies K1 Mocvd K1 Gan K1 Schottky Barrier Photodetector K1 Reverse-bias Leakage K1 Molecular-beam Epitaxy K1 P-n-junctions K1 Positron-annihilation K1 Diodes K1 Films K1 光电子学 K1 atomic layer deposition K1 p-n homojunctions K1 positron annihilation K1 photography--films K1 finite volume method K1 atomic layer epitaxial growth K1 ale K1 mle growth K1 molecular layer epitaxial growth K1 chemical beam epitaxial growth K1 cbe K1 gas source mbe K1 gsmbe K1 metalorganic molecular beam epitaxy K1 mombe K1 ommbe K1 chemical vapour deposition K1 apcvd K1 chemical vapor deposition K1 cvd K1 laser cvd K1 laser-induced cvd K1 lpcvd K1 chemical vapour infiltration K1 chemical vapor infiltration K1 cvi K1 crystal growth from vapour K1 laser deposition K1 metalorganic chemical vapour deposition K1 movpe K1 omcvd K1 omvpe K1 molecular beam epitaxial growth K1 mbe K1 migration-enhanced epitaxy K1 vapour phase epitaxial growth JF CHINESE PHYSICS B LK http://ir.semi.ac.cn/handle/172111/11240 DO http://ir.semi.ac.cn/handle/172111/11240 SF ELIB - SuUB Bremen
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