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1 Ergebnisse
1
Influence of high-temperature AIN buffer thickness on the p..:
Zhang BS
;
Wu M
;
Shen XM
...
JOURNAL OF CRYSTAL GROWTH. , 2003
Link:
http://ir.semi.ac.cn/handle/172111/11446
RT Journal T1
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)
UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_11446&Exemplar=1&LAN=DE A1 Zhang BS A1 Wu M A1 Shen XM A1 Chen J A1 Zhu JJ A1 Liu JP A1 Feng G A1 Zhao DG A1 Wang YT A1 Yang H A1 Zhang BS,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China YR 2003 K1 Metalorganic Chemical Vapor Deposition K1 Nitrides K1 Semiconductor Iii-v Materials K1 Molecular-beam Epitaxy K1 High-quality Gan K1 Chemical-vapor-deposition K1 Intermediate Layer K1 Alas K1 Aln K1 Surfaces K1 Silicon K1 Films K1 半导体材料 K1 metal organic chemical vapor deposition K1 atomic layer deposition K1 chemical vapor deposition K1 vapor-plating K1 photography--films K1 finite volume method K1 metal organic vapor phase epitaxy K1 metallorganic vapor phase epitaxy K1 mocvd (vapor deposition) K1 movpe (vapor deposition) K1 omcvd (vapor deposition) K1 omvpe (vapor deposition) K1 organo-metal vapor phase epitaxy K1 organometallic chemical vapor deposition K1 organometallic vapor phase epitaxy K1 metalorganic vapor phase epitaxy K1 organometallic vapor deposition K1 nitride K1 nitrures K1 atomic layer epitaxial growth K1 ale K1 mle growth K1 molecular layer epitaxial growth K1 chemical beam epitaxial growth K1 cbe K1 gas source mbe K1 gsmbe K1 metalorganic molecular beam epitaxy K1 mombe K1 ommbe K1 chemical vapour deposition K1 apcvd JF JOURNAL OF CRYSTAL GROWTH LK http://ir.semi.ac.cn/handle/172111/11446 DO http://ir.semi.ac.cn/handle/172111/11446 SF ELIB - SuUB Bremen
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