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1 Ergebnisse
1
Self-consistent analysis of AlSb/InAs high electron mobilit..:
Li YB (Li Yanbo)
;
Zhang Y (Zhang Yang)
;
Zeng YP (Zeng Yiping)
..
JOURNAL OF APPLIED PHYSICS. , 2010
Link:
http://ir.semi.ac.cn/handle/172111/13545
RT Journal T1
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures
UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_13545&Exemplar=1&LAN=DE A1 Li YB (Li Yanbo) A1 Zhang Y (Zhang Yang) A1 Zeng YP (Zeng Yiping) A1 Li, YB, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. E-mail Address: nkybli@163.com A1 ypzeng@semi.ac.cn YR 2010 K1 Inas/alsb Quantum-wells K1 Low-power Applications K1 Hemts K1 Modulation K1 Heterostructures K1 Technology K1 Channel K1 Voltage K1 Mass K1 半导体材料 K1 adaptive modulation K1 electromotive force K1 adaptive delta modulation K1 adaptive differential pulse code modulation K1 adpcm K1 differential pulse code modulation K1 dpcm K1 modulation/demodulation K1 dpcm (modulation) K1 carrier modulation K1 arts K1 useful K1 useful arts K1 applied science K1 science K1 applied K1 industrial arts K1 mechanic arts K1 trades K1 science and technology K1 technological knowledge K1 信道 K1 孔道 K1 电势 K1 electric potential K1 potential K1 electric K1 emf (electromotive force) K1 force K1 electromotive K1 electrostatics K1 electricity K1 static K1 static electricity JF JOURNAL OF APPLIED PHYSICS LK http://ir.semi.ac.cn/handle/172111/13545 DO http://ir.semi.ac.cn/handle/172111/13545 SF ELIB - SuUB Bremen
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