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1 Ergebnisse
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Microphotoluminescence investigation of InAs quantum dot ac..:
Ding Y (Ding Y.)
;
Fan WJ (Fan W. J.)
;
Ma BS (Ma B. S.)
...
JOURNAL OF APPLIED PHYSICS. , 2010
Link:
http://ir.semi.ac.cn/handle/172111/13930
RT Journal T1
Microphotoluminescence investigation of InAs quantum dot active region in 1.3 mu m vertical cavity surface emitting laser structure
UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_13930&Exemplar=1&LAN=DE A1 Ding Y (Ding Y.) A1 Fan WJ (Fan W. J.) A1 Ma BS (Ma B. S.) A1 Xu DW (Xu D. W.) A1 Yoon SF (Yoon S. F.) A1 Liang S (Liang S.) A1 Zhao LJ (Zhao L. J.) A1 Wasiak M (Wasiak M.) A1 Czyszanowski T (Czyszanowski T.) A1 Nakwaski W (Nakwaski W.) A1 Ding, Y, NanyangTechnolUniv, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: yding@ntu.edu.sg YR 2010 K1 Vapor-phase Epitaxy K1 Photovoltage Spectroscopy K1 Photoluminescence K1 Modes K1 半导体材料 K1 vapor phase epitaxy K1 光致发光 JF JOURNAL OF APPLIED PHYSICS LK http://ir.semi.ac.cn/handle/172111/13930 DO http://ir.semi.ac.cn/handle/172111/13930 SF ELIB - SuUB Bremen
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