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1 Ergebnisse
1
Numerical study of strained InGaAs quantum well lasers emit..:
Wang M
;
Gu YX
;
Ji HM
...
CHINESE PHYSICS B. , 2011
Link:
http://ir.semi.ac.cn/handle/172111/22789
RT Journal T1
Numerical study of strained InGaAs quantum well lasers emitting at 2.33 mu m using the eight-band model
UL https://suche.suub.uni-bremen.de/peid=base-ftchinacadscsemi:oai:ir.semi.ac.cn:172111_22789&Exemplar=1&LAN=DE A1 Wang M A1 Gu YX A1 Ji HM A1 Yang T A1 Wang ZG A1 Yang, T (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China, tyang@semi.ac.cn YR 2011 K1 Epitaxy K1 Movpe K1 半导体材料 K1 atomic layer deposition K1 epitaxial growth K1 solid phase epitaxial growth K1 solid phase epitaxy K1 spe K1 atomic layer epitaxial growth K1 ale K1 mle growth K1 molecular layer epitaxial growth K1 chemical beam epitaxial growth K1 cbe K1 gas source mbe K1 gsmbe K1 metalorganic molecular beam epitaxy K1 mombe K1 ommbe K1 chemical vapour deposition K1 apcvd K1 chemical vapor deposition K1 cvd K1 laser cvd K1 laser-induced cvd K1 lpcvd K1 chemical vapour infiltration K1 chemical vapor infiltration K1 cvi K1 crystal growth from vapour K1 laser deposition K1 mocvd K1 metalorganic chemical vapour deposition K1 omcvd K1 omvpe K1 molecular beam epitaxial growth K1 mbe K1 migration-enhanced epitaxy K1 vapour phase epitaxial growth K1 hot wall epitaxial growth K1 vapor phase epitaxial growth K1 vpe K1 cvi (fabrication) K1 ald K1 molecular beam epitaxy K1 coulomb-bethe K1 many-body expansion JF CHINESE PHYSICS B LK http://ir.semi.ac.cn/handle/172111/22789 DO http://ir.semi.ac.cn/handle/172111/22789 SF ELIB - SuUB Bremen
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